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Número de pieza | RJK0212DPA | |
Descripción | Silicon N Channel Power MOS FET Power Switching | |
Fabricantes | Renesas Technology | |
Logotipo | ||
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No Preview Available ! RJK0212DPA
Silicon N Channel Power MOS FET
Power Switching
Features
Very high speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 9 m typ. (at VGS = 10 V)
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008DC-A
(Package name: WPAK(2))
5 678
Preliminary Datasheet
REJ03G1950-0011
Rev.0.11
Jul 02, 2010
5 678
D DDD
4 32 1
4
G
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal resistance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
ch-c Note3
Tch
Tstg
Ratings
25
+16, –12
25
100
25
16
32
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
REJ03G1950-0011 Rev.0.11
Jul 02, 2010
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Número de pieza | Descripción | Fabricantes |
RJK0212DPA | Silicon N Channel Power MOS FET Power Switching | Renesas Technology |
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