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Teilenummer | 3DG9014 |
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Beschreibung | SILICON NPN TRANSISTOR | |
Hersteller | ETC | |
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Gesamt 1 Seiten 9014(3DG9014)
硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途:用于低电平、低噪声的前置放大器。
Purpose: Low frequency, low noise amplifier.
特点:PC 大,hFE 高而且特性好,与 9015(3CG9015)互补。
Features: High PC and hFE excellent hFE linearity, complementary pair with 9015(3CG9015).
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号
数值
单位
Symbol
Rating
Unit
VCBO 50 V
VCEO 45 V
VEBO 5.0 V
IC 100 mA
PC 450 mW
Tj 150 ℃
Tstg -55~150 ℃
电性能参数/Features characteristics(Ta=25℃)
参数符号
Symbol
测试条件
Test condition
VCBO
VCEO
VEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE
fT
Cob
NF
IC=0.1mA
IE=0
IC=1.0mA
IB=0
IE=0.1mA
IC=0
VCB=50V
IE=0
VEB=5.0V
IC=0
VCE=5.0V
IC=1.0mA
IC=100mA
IB=5.0mA
IC=100mA
IB=5.0mA
VCE=5.0V
IC=2.0mA
VCE=5.0V
IC=10mA
VCB=10V IE=0 f=1.0MHz
VCE=5.0V IC=0.2mA Rg=2.0K Ω
f=1.0KΩ △f=200Hz
最小值
Min
50
45
5.0
60
150
数值
Rating
典型值
Typ
0.14
0.84
0.63
270
2.2
0.9
最大值
Max
0.05
0.05
1000
0.3
1.0
0.7
3.5
10
单位
Unit
V
V
V
μA
μA
V
V
V
MHz
pF
dB
hFE 分档/hFE classifications: A:60~150 B:100~300 C:200~600 D:400~1000
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Seiten | Gesamt 1 Seiten | |
PDF Download | [ 3DG9014 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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3DG9014 | NPN EPITAXIAL SILICON TRANSISTOR | JILIN SINO |
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www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |