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Teilenummer | PBSS4032NT |
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Beschreibung | 2.6A NPN low VCEsat (BISS) transistor | |
Hersteller | NXP Semiconductors | |
Logo | ||
Gesamt 14 Seiten DataSheet.in
PBSS4032NT
30 V, 2.6 A NPN low VCEsat (BISS) transistor
Rev. 01 — 18 December 2009
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4032PT.
1.2 Features
Low collector-emitter saturation voltage VCEsat
Optimized switching time
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
AEC-Q101 qualified
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
DC-to-DC conversion
Battery-driven devices
Power management
Charging circuits
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
peak collector current
collector-emitter
saturation resistance
single pulse;
tp ≤ 1 ms
IC = 2.5 A;
IB = 0.25 A
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Min Typ Max Unit
- - 30 V
- - 2.6 A
- - 5A
[1] -
76 105 mΩ
DataSheet.in
NXP Semiconductors
PBSS4032NT
30 V, 2.6 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
ICES
collector-base cut-off VCB = 30 V; IE = 0 A
current
VCB = 30 V; IE = 0 A;
Tj = 150 °C
collector-emitter
cut-off current
VCE = 24 V; VBE = 0 V
IEBO emitter-base cut-off VEB = 5 V; IC = 0 A
current
hFE
VCEsat
RCEsat
DC current gain
VCE = 2 V; IC = 500 mA
VCE = 2 V; IC = 1 A
VCE = 2 V; IC = 2 A
VCE = 2 V; IC = 4 A
collector-emitter
saturation voltage
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 50 mA
IC = 1 A; IB = 10 mA
IC = 2.5 A; IB = 250 mA
IC = 3 A; IB = 300 mA
collector-emitter
IC = 2.5 A; IB = 250 mA
saturation resistance
VBEsat
VBEon
base-emitter
saturation voltage
base-emitter turn-on
voltage
IC = 1 A; IB = 100 mA
IC = 2.5 A; IB = 250 mA
VCE = 2 V; IC = 2 A
td delay time
tr rise time
ton turn-on time
VCC = 12.5 V; IC = 1 A;
IBon = 0.05 A;
IBoff = −0.05 A
ts storage time
tf fall time
toff turn-off time
fT transition frequency VCE = 10 V;
IC = 100 mA;
f = 100 MHz
Cc collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Min
-
-
-
-
300
[1] 300
[1] 200
[1] 100
-
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
-
-
-
-
-
-
-
-
-
Typ Max Unit
- 100 nA
- 50 μA
- 100 nA
- 100 nA
500 -
500 -
370 -
150 -
80 120 mV
125 175 mV
175 245 mV
200 280 mV
230 320 mV
76 105 mΩ
0.79 0.9 V
0.88 0.95 V
0.79 0.85 V
15 -
20 -
35 -
135 -
60 -
195 -
180 -
ns
ns
ns
ns
ns
ns
MHz
28 -
pF
PBSS4032NT_1
Product data sheet
Rev. 01 — 18 December 2009
© NXP B.V. 2009. All rights reserved.
6 of 14
6 Page DataSheet.in
NXP Semiconductors
PBSS4032NT
30 V, 2.6 A NPN low VCEsat (BISS) transistor
12. Revision history
Table 9. Revision history
Document ID
Release date
PBSS4032NT_1
20091218
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PBSS4032NT_1
Product data sheet
Rev. 01 — 18 December 2009
© NXP B.V. 2009. All rights reserved.
12 of 14
12 Page | ||
Seiten | Gesamt 14 Seiten | |
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