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PBSS4032NT Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer PBSS4032NT
Beschreibung 2.6A NPN low VCEsat (BISS) transistor
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 14 Seiten
PBSS4032NT Datasheet, Funktion
DataSheet.in
PBSS4032NT
30 V, 2.6 A NPN low VCEsat (BISS) transistor
Rev. 01 — 18 December 2009
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4032PT.
1.2 Features
„ Low collector-emitter saturation voltage VCEsat
„ Optimized switching time
„ High collector current capability IC and ICM
„ High collector current gain (hFE) at high IC
„ High energy efficiency due to less heat generation
„ AEC-Q101 qualified
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
„ DC-to-DC conversion
„ Battery-driven devices
„ Power management
„ Charging circuits
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
peak collector current
collector-emitter
saturation resistance
single pulse;
tp 1 ms
IC = 2.5 A;
IB = 0.25 A
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
Min Typ Max Unit
- - 30 V
- - 2.6 A
- - 5A
[1] -
76 105 mΩ






PBSS4032NT Datasheet, Funktion
DataSheet.in
NXP Semiconductors
PBSS4032NT
30 V, 2.6 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
ICES
collector-base cut-off VCB = 30 V; IE = 0 A
current
VCB = 30 V; IE = 0 A;
Tj = 150 °C
collector-emitter
cut-off current
VCE = 24 V; VBE = 0 V
IEBO emitter-base cut-off VEB = 5 V; IC = 0 A
current
hFE
VCEsat
RCEsat
DC current gain
VCE = 2 V; IC = 500 mA
VCE = 2 V; IC = 1 A
VCE = 2 V; IC = 2 A
VCE = 2 V; IC = 4 A
collector-emitter
saturation voltage
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 50 mA
IC = 1 A; IB = 10 mA
IC = 2.5 A; IB = 250 mA
IC = 3 A; IB = 300 mA
collector-emitter
IC = 2.5 A; IB = 250 mA
saturation resistance
VBEsat
VBEon
base-emitter
saturation voltage
base-emitter turn-on
voltage
IC = 1 A; IB = 100 mA
IC = 2.5 A; IB = 250 mA
VCE = 2 V; IC = 2 A
td delay time
tr rise time
ton turn-on time
VCC = 12.5 V; IC = 1 A;
IBon = 0.05 A;
IBoff = 0.05 A
ts storage time
tf fall time
toff turn-off time
fT transition frequency VCE = 10 V;
IC = 100 mA;
f = 100 MHz
Cc collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
Min
-
-
-
-
300
[1] 300
[1] 200
[1] 100
-
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
-
-
-
-
-
-
-
-
-
Typ Max Unit
- 100 nA
- 50 μA
- 100 nA
- 100 nA
500 -
500 -
370 -
150 -
80 120 mV
125 175 mV
175 245 mV
200 280 mV
230 320 mV
76 105 mΩ
0.79 0.9 V
0.88 0.95 V
0.79 0.85 V
15 -
20 -
35 -
135 -
60 -
195 -
180 -
ns
ns
ns
ns
ns
ns
MHz
28 -
pF
PBSS4032NT_1
Product data sheet
Rev. 01 — 18 December 2009
© NXP B.V. 2009. All rights reserved.
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PBSS4032NT pdf, datenblatt
DataSheet.in
NXP Semiconductors
PBSS4032NT
30 V, 2.6 A NPN low VCEsat (BISS) transistor
12. Revision history
Table 9. Revision history
Document ID
Release date
PBSS4032NT_1
20091218
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PBSS4032NT_1
Product data sheet
Rev. 01 — 18 December 2009
© NXP B.V. 2009. All rights reserved.
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