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What is PBSS4041SP?

This electronic component, produced by the manufacturer "NXP Semiconductors", performs the same function as "5.9A PNP/PNP Low V_CEsat (BISS) Transistor".


PBSS4041SP Datasheet PDF - NXP Semiconductors

Part Number PBSS4041SP
Description 5.9A PNP/PNP Low V_CEsat (BISS) Transistor
Manufacturers NXP Semiconductors 
Logo NXP Semiconductors Logo 


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DataSheet.in
PBSS4041SP
60 V, 5.9 A PNP/PNP low VCEsat (BISS) transistor
Rev. 1 — 14 July 2010
Product data sheet
1. Product profile
1.1 General description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8)
medium power Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Type number
Package
NXP
PBSS4041SP SOT96-1
Name
SO8
NPN/NPN
complement
PBSS4041SN
NPN/PNP
complement
PBSS4041SPN
1.2 Features and benefits
„ Very low collector-emitter saturation voltage VCEsat
„ High collector current capability IC and ICM
„ High collector current gain (hFE) at high IC
„ High efficiency due to less heat generation
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
„ Loadswitch
„ Battery-driven devices
„ Power management
„ Charging circuits
„ Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
VCEO
IC
ICM
collector-emitter voltage
collector current
peak collector current
RCEsat collector-emitter
saturation resistance
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
Conditions
open base
single pulse;
tp 1 ms
IC = 4 A;
IB = 0.4 A
Min Typ Max
- - 60
- - 5.9
- - 15
[1] -
47 70
Unit
V
A
A
mΩ

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PBSS4041SP equivalent
DataSheet.in
NXP Semiconductors
PBSS4041SP
60 V, 5.9 A PNP/PNP low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
10
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aac336
101
105
104
103
102
101
1
10 102 103
tp (s)
Fig 3.
FR4 PCB, mounting pad for collector 1 cm2
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
102
Zth(j-a)
(K/W)
10
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0
0.01
006aac337
101
105
104
103
102
101
1
10 102 103
tp (s)
Fig 4.
Ceramic PCB, Al2O3, standard footprint
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSS4041SP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 14 July 2010
© NXP B.V. 2010. All rights reserved.
5 of 15


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Part NumberDescriptionMFRS
PBSS4041SNThe function is 6.7A NPN/NPN Low V_CEsat (BISS) Transistor. NXP SemiconductorsNXP Semiconductors
PBSS4041SPThe function is 5.9A PNP/PNP Low V_CEsat (BISS) Transistor. NXP SemiconductorsNXP Semiconductors

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