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PBSS4032SPN Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer PBSS4032SPN
Beschreibung 30V NPN/PNP low VCEsat (BISS) transistor
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 20 Seiten
PBSS4032SPN Datasheet, Funktion
DataSheet.in
PBSS4032SPN
30 V NPN/PNP low VCEsat (BISS) transistor
Rev. 1 — 14 July 2010
Product data sheet
1. Product profile
1.1 General description
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8)
medium power Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Type number
Package
NXP
PBSS4032SPN SOT96-1
Name
SO8
NPN/NPN
complement
PBSS4032SN
PNP/PNP
complement
PBSS4032SP
1.2 Features and benefits
„ Low collector-emitter saturation voltage VCEsat
„ Optimized switching time
„ High collector current capability IC and ICM
„ High collector current gain (hFE) at high IC
„ High efficiency due to less heat generation
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
„ DC-to-DC conversion
„ Battery-driven devices
„ Power management
„ Charging circuits
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
TR1; NPN low VCEsat transistor
VCEO collector-emitter voltage
IC collector current
ICM peak collector current
RCEsat collector-emitter
saturation resistance
Conditions
open base
single pulse; tp 1 ms
IC = 4 A; IB = 0.4 A
Min Typ Max Unit
- - 30 V
- - 5.7 A
- - 10 A
[1] - 45 62.5 mΩ






PBSS4032SPN Datasheet, Funktion
DataSheet.in
NXP Semiconductors
PBSS4032SPN
30 V NPN/PNP low VCEsat (BISS) transistor
102
Zth(j-a)
(K/W)
10
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02 0.01
0
006aac305
101
105
104
103
102
101
1
10 102 103
tp (s)
Fig 4.
Ceramic PCB, Al2O3, standard footprint
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSS4032SPN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 14 July 2010
© NXP B.V. 2010. All rights reserved.
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PBSS4032SPN pdf, datenblatt
DataSheet.in
NXP Semiconductors
PBSS4032SPN
30 V NPN/PNP low VCEsat (BISS) transistor
1
VCEsat
(V)
101
(1)
(2)
(3)
006aac318
1
VCEsat
(V)
101
(1)
(2)
(3)
006aac319
102
101
1
10
102
103
104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = 55 °C
Fig 17. TR2 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
103
RCEsat
(Ω)
102
006aac320
102
101
1
10
102
103
104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 18. TR2 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
103
RCEsat
(Ω)
102
006aac321
10 10
1 (1)
(2)
101
(3)
102
101
1
10
102
103
104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = 55 °C
Fig 19. TR2 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
1 (1)
(2)
101
(3)
102
101
1
10
102
103
104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 20. TR2 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
PBSS4032SPN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 14 July 2010
© NXP B.V. 2010. All rights reserved.
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