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PDF EN25Q16 Data sheet ( Hoja de datos )
| Número de pieza | EN25Q16 | |
| Descripción | 16 Megabit Serial Flash Memory | |
| Fabricantes | Eon Silicon Solution | |
| Logotipo |  |
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EN25Q16
EN25Q16
16 Megabit Serial Flash Memory with 4Kbyte Uniform Sector
FEATURES
• Single power supply operation
- Full voltage range: 2.7-3.6 volt
• Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3
• 16 Mbit Serial Flash
- 16 M-bit/2048 K-byte/8192 pages
- 256 bytes per programmable page
• Standard, Dual or Quad SPI
- Standard SPI: CLK, CS#, DI, DO, WP#
- Dual SPI: CLK, CS#, DQ0, DQ1, WP#
- Quad SPI: CLK, CS#, DQ0, DQ1, DQ2, DQ3
• High performance
- 100MHz clock rate for one data bit
- 80MHz clock rate for two data bits
- 80MHz clock rate for four data bits
• Low power consumption
- 12 mA typical active current
- 1 μA typical power down current
• Uniform Sector Architecture:
- 512 sectors of 4-Kbyte
- 32 blocks of 64-Kbyte
- Any sector or block can be erased individually
• Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
• High performance program/erase speed
- Page program time: 1.3ms typical
- Sector erase time: 90ms typical
- Block erase time 400ms typical
- Chip erase time: 12 seconds typical
• Lockable 128 byte OTP security sector
• Minimum 100K endurance cycle
• Package Options
- 8 pins SOP 150mil body width
- 8 pins SOP 200mil body width
- 8 contact VDFN
- 8 pins PDIP
- All Pb-free packages are RoHS compliant
• Industrial temperature Range
GENERAL DESCRIPTION
The EN25Q16 is a 16-Megabit (2048K-byte) Serial Flash memory, with advanced write protection
mechanisms. The EN25Q16 supports the standard Serial Peripheral Interface (SPI), and a high
performance Dual/Quad output as well as Dual/Quad I/O using SPI pins: Serial Clock, Chip Select,
Serial DQ0(DI), DQ1(DO), DQ2(WP#) and DQ3(NC). SPI clock frequencies of up to 80MHz are
supported allowing equivalent clock rates of 160MHz for Dual Output and 320MHz for Quad Output
when using the Dual/Quad Output Fast Read instructions. The memory can be programmed 1 to 256
bytes at a time, using the Page Program instruction.
The EN25Q16 is designed to allow either single Sector/Block at a time or full chip erase operation. The
EN25Q16 can be configured to protect part of the memory as the software protected mode. The device
can sustain a minimum of 100K program/erase cycles on each sector or block.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
©2004 Eon Silicon Solution, Inc.,
Rev. E, Issue Date: 2009/10/21
www.eonssi.com
1 page  
www.DataSheet4U.com
EN25Q16
MEMORY ORGANIZATION
The memory is organized as:
z 2,097,152 bytes
z Uniform Sector Architecture
32 blocks of 64-Kbyte
512 sectors of 4-Kbyte
z 8192 pages (256 bytes each)
Each page can be individually programmed (bits are programmed from 1 to 0). The device is Sector,
Block or Chip Erasable but not Page Erasable.
Table 2. Uniform Block Sector Architecture
Block
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Sector
511
496
495
480
479
464
463
448
447
432
431
416
415
400
399
384
383
368
367
352
351
336
335
320
319
304
303
288
287
272
271
256
255
240
Address range
1FF000h
1FFFFFh
1F0000h
1EF000h
1F0FFFh
1EFFFFh
1E0000h
1DF000h
1E0FFFh
1DFFFFh
1D0000h
1CF000h
1D0FFFh
1CFFFFh
1C0000h
1BF000h
1C0FFFh
1BFFFFh
1B0000h
1AF000h
1B0FFFh
1AFFFFh
1A0000h
19F000h
1A0FFFh
19FFFF
190000h
18F000h
190FFFh
18FFFFh
180000h
17F000h
180FFFh
17FFFFh
170000h
16F000h
170FFFh
16FFFFh
160000
15F000
160FFFh
15FFFFh
150000h
14F000h
150FFFh
14FFFFh
140000h
13F000h
140FFFh
13FFFFh
130000h
12F000h
130FFFh
12FFFFh
120000h
11F000h
120FFFh
11FFFFh
110000h
10F000h
110FFFh
10FFFFh
100000h
0FF000h
100FFFh
0FFFFFh
0F0000h
0F0FFFh
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
5
©2004 Eon Silicon Solution, Inc.,
Rev. E, Issue Date: 2009/10/21
www.eonssi.com
5 Page 
www.DataSheet4U.com
Table 4B. Instruction Set (Read Instruction)
EN25Q16
Instruction Name Byte 1
Code
Read Data
03h
Fast Read
0Bh
Byte 2
A23-A16
A23-A16
Byte 3
A15-A8
A15-A8
Dual Output Fast
Read
3Bh
A23-A16 A15-A8
Dual I/O Fast Read BBh
Quad I/O Fast Read EBh
A23-A8(2)
A7-A0,
dummy (2)
A23-A0, (dummy,
dummy (4) D7-D0 ) (5)
Byte 4
A7-A0
A7-A0
A7-A0
Byte 5
(D7-D0)
dummy
dummy
(D7-D0, …) (1)
(D7-D0, …) (3)
Byte 6
n-Bytes
(Next byte)
(D7-D0)
(D7-D0, …) (1)
continuous
(Next Byte)
continuous
(one byte
per 4 clocks,
continuous)
(one byte
per 4 clocks,
continuous)
(one byte
per 2 clocks,
continuous)
Notes:
1. Dual Output data
DQ0 = (D6, D4, D2, D0)
DQ1 = (D7, D5, D3, D1)
2. Dual Input Address
DQ0 = A22, A20, A18, A16, A14, A12, A10, A8 ; A6, A4, A2, A0, dummy 6, dummy 4, dummy 2, dummy 0
DQ1 = A23, A21, A19, A17, A15, A13, A11, A9 ; A7, A5, A3, A1, dummy 7, dummy 5, dummy 3, dummy 1
3. Quad Data
DQ0 = (D4, D0, …… )
DQ1 = (D5, D1, …… )
DQ2 = (D6, D2, …... )
DQ3 = (D7, D3, …... )
4. Quad Input Address
DQ0 = A20, A16, A12, A8, A4, A0, dummy 4, dummy 0
DQ1 = A21, A17, A13, A9, A5, A1, dummy 5, dummy 1
DQ2 = A22, A18, A14, A10, A6, A2, dummy 6, dummy 2
DQ3 = A23, A19, A15, A11, A7, A3, dummy 7, dummy 3
5. Quad I/O Fast Read Data
DQ0 = ( dummy 12, dummy 8, dummy 4, dummy 0, D4, D0 )
DQ1 = ( dummy 13, dummy 9, dummy 5, dummy 1, D5, D1 )
DQ2 = ( dummy 14, dummy 10, dummy 6, dummy 2, D6, D2 )
DQ3 = ( dummy 15, dummy 11, dummy 7, dummy 3, D7, D3 )
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
11
©2004 Eon Silicon Solution, Inc.,
Rev. E, Issue Date: 2009/10/21
www.eonssi.com
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet EN25Q16.PDF ] | |
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