N04L163WC1A Datasheet PDF - NanoAmp Solutions
| Part Number | N04L163WC1A | |
| Description | 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit | |
| Manufacturers | NanoAmp Solutions | |
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NanoAmp Solutions, Inc.
N04L163WC1A670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
www.DataSheet4U.com
4Mb Ultra-Low Power Asynchronous CMOS SRAM
256K × 16 bit
Overview
Features
The N04L163WC1A is an integrated memory
device containing a 4 Mbit Static Random Access
Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with a single chip
enable (CE) control and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently. The N04L163WC1A is
optimal for various applications where low-power is
critical such as battery backup and hand-held
devices. The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in JEDEC standard packages compatible
with other standard 256Kb x 16 SRAMs.
Product Family
• Single Wide Power Supply Range
2.3 to 3.6 Volts
• Very low standby current
4.0µA at 3.0V (Typical)
• Very low operating current
2.0mA at 3.0V and 1µs (Typical)
• Very low Page Mode operating current
0.8mA at 3.0V and 1µs (Typical)
• Simple memory control
Single Chip Enable (CE)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.8V
• Very fast output enable access time
25ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package avail-
able
Part Number
Package Type
Operating
Temperature
Power
Supply
(Vcc)
Speed
Options
Standby
Operating
Current (ISB), Current (Icc),
Typical
Typical
N04L163WC1AB
48 - BGA
N04L163WC1AT
44 - TSOP II
N04L163WC1AB1 48 - BGA Pb-Free -40oC to +85oC 2.3V - 3.6V 70ns@ 2.7V
4 µA
2 mA @ 1MHz
N04L163WC1AT2 44 - TSOP II Green
(DOC# 14-02-018 REV I ECN# 01-1001)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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NanoAmp Solutions, Inc.
N04L163WC1Awww.DataSheet4U.com
Power Savings with Page Mode Operation (WE = VIH)
Page Address (A4 - A17 )
Word Address (A0 - A3)
CE
Word 1
Open page
Word 2
...
Word 16
OE
LB, UB
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power
saving feature.
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open
and 16-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is
considerably lower than standard operating currents for low power SRAMs.
(DOC# 14-02-018 REV I ECN# 01-1001)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for N04L163WC1A electronic component. |
| Information | Total 11 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ N04L163WC1A.PDF Datasheet ] | |
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