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PDF PMEG3020EPA Data sheet ( Hoja de datos )
| Número de pieza | PMEG3020EPA | |
| Descripción | 2 A low VF MEGA Schottky barrier rectifier | |
| Fabricantes | NXP Semiconductors | |
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PMEG3020EPA
2 A low VF MEGA Schottky barrier rectifier
Rev. 01 — 15 December 2009
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection. PMEG3020EPA is encapsulated in an ultra thin
SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium
power capability.
1.2 Features
Average forward current: IF(AV) ≤ 2 A
Reverse voltage: VR ≤ 30 V
Low forward voltage
Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity
Leadless small SMD plastic package with medium power capability
AEC-Q101 qualified
1.3 Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch Mode Power Supply (SMPS)
Reverse polarity protection
Low power consumption applications
Battery chargers for mobile equipment
1.4 Quick reference data
Table 1. Quick reference data
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
IF(AV)
average forward current
square wave;
δ = 0.5;
f = 20 kHz
VR reverse voltage
VF forward voltage
IR reverse current
Tamb ≤ 65 °C
Tsp ≤ 140 °C
IF = 2 A
VR = 30 V
[1] -
-
-
-
-
-2
-2
- 30
410 470
435 2500
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
Unit
A
A
V
mV
μA
1 page  
NXP Semiconductors
PMEG3020EPAw w w . D a t a S h e e t 4 U . c o
2 A low VF MEGA Schottky barrier rectifier
102
Zth(j-a)
(K/W)
10
duty cycle =
1
0.75
0.5
0.33
0.25 0.2
0.1 0.05
0
0.02
0.01
006aab639
1
10−3
10−2
10−1
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VF
forward voltage
IF = 0.5 A
IF = 1 A
IF = 2 A
IR
reverse current
VR = 10 V
VR = 30 V
Cd diode capacitance f = 1 MHz
VR = 1 V
VR = 10 V
trr reverse recovery time
Min Typ
- 290
- 335
- 410
- 100
- 435
- 150
- 55
[1] -
47
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
Max
-
-
470
-
2500
-
-
-
Unit
mV
mV
mV
μA
μA
pF
pF
ns
PMEG3020EPA_1
Product data sheet
Rev. 01 — 15 December 2009
© NXP B.V. 2009. All rights reserved.
5 of 13
5 Page 
NXP Semiconductors
12. Revision history
Table 9. Revision history
Document ID
Release date
PMEG3020EPA_1
20091215
Data sheet status
Product data sheet
PMEG3020EPAwww.DataSheet4U.com
2 A low VF MEGA Schottky barrier rectifier
Change notice
-
Supersedes
-
PMEG3020EPA_1
Product data sheet
Rev. 01 — 15 December 2009
© NXP B.V. 2009. All rights reserved.
11 of 13
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| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet PMEG3020EPA.PDF ] | |
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