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Número de pieza | RSU002N06 | |
Descripción | 2.5V Drive Nch MOSFET | |
Fabricantes | ROHM Semiconductor | |
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2.5V Drive Nch MOSFET
RSM002N06
Structure
Silicon N-channel MOSFET
Features
1) High speed switing.
2) Small package(VMT3).
3) Low voltage drive(2.5V drive).
Application
Switching
Dimensions (Unit : mm)
VMT3
Abbreviated symbol : RK
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RSM002N06
Taping
T2L
8000
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID
IDP *1
IS
ISP *1
PD *2
Tch
Tstg
60
20
250
1
125
1
150
150
55 to +150
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
Unit
V
V
mA
A
mA
A
mW
C
C
Inner circuit
(3)
∗2
(1)
∗1
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) GATE
(2) SOURCE
(3) DRAIN
Thermal resistance
Parameter
Channel to ambient
* Each terminal mounted on a recommended land.
Symbol
Rth (ch-a)*
Limits
833
Unit
C / W
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○c 2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.04 - Rev.A
1 page RSM002N06
Measurement circuits
VGS
RG
ID
RL
VDS
D.U.T.
VDD
Fig.1-1 Switching time measurement circuit
Pulse width
50%
VGS 10%
VDS
10%
90% 50%
10%
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.1-2 Switching waveforms
Data Sheet
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Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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○c 2010 ROHM Co., Ltd. All rights reserved.
5/5
2010.04 - Rev.A
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet RSU002N06.PDF ] |
Número de pieza | Descripción | Fabricantes |
RSU002N06 | 2.5V Drive Nch MOSFET | ROHM Semiconductor |
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