|
|
Teilenummer | RFUS20TM6S |
|
Beschreibung | Super Fast Recovery Diode | |
Hersteller | ROHM Semiconductor | |
Logo | ||
Gesamt 4 Seiten Super Fast Recovery Diode
RFUS20TM6S
Series
Ultra Fast Recovery
Dimensions(Unit : mm)
+0.3
-0.1
Applications
General rectification
+0.3
-0.1
+0.2
-0.1
Features
1)Cathode Common Single type.(TO-220)
2)Ultra High switching speed
Construction
Silicon epitaxial planar
(1) (2) (3)
+0.1
-0.05
www.DataSheet4U.com
Structure
(1) (2) (3)
Absolute maximum ratings (Tc=25C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
Average rectified forward current
VRM
VR
Io
Forward current surge peak
IFSM
Junction temperature
Storage temperature
Tj
Tstg
Conditions
Duty≦0.5
Direct voltage
60Hz half sin wave, Resistance load, Tc=50C
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25C
Limits
600
600
20
100
150
-55 to 150
Unit
V
V
A
A
C
C
Electrical characteristics(Tj=25C)
Parameter
Symbol
Forward voltage
Reverse current
Reverse recovery time
VF
IR
trr
Thermal Resistance
Rth(j-c)
Conditions
IF=20A
VR=600V
IF=0.5A,IR=1A,Irr=0.25×IR
junction to case
Min. Typ. Max. Unit
- 2.3 2.8 V
- 0.05 10 μA
-
23 35
ns
- - 1.8 C / W
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/3
2010.02 - Rev.A
| ||
Seiten | Gesamt 4 Seiten | |
PDF Download | [ RFUS20TM6S Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
RFUS20TM6S | Super Fast Recovery Diode | ROHM Semiconductor |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |