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PDF EMP210 Data sheet ( Hoja de datos )

Número de pieza EMP210
Descripción 9.5 - 12 GHz Power Amplifier MMIC
Fabricantes Excelics Semiconductor 
Logotipo Excelics Semiconductor Logotipo



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No Preview Available ! EMP210 Hoja de datos, Descripción, Manual

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UPDATED 05/08/2008
EMP210
9.5 – 12 GHz Power Amplifier MMIC
FEATURES
9.5 – 12.0 GHz Operating Frequency Range
24.0dBm Output Power at 1dB Compression
17.0 dB Typical Small Signal Gain
-41dBc OIMD3 @Each Tone Pout 12.5dBm
APPLICATIONS
Point-to-point and point-to-multipoint radio
Military Radar Systems
Dimension: 2250um X 1000um
Thickness: 75um ± 13um
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, VDD=7V, IDQ=180mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX
F Operating Frequency Range
9.5 12.0
P1dB
Output Power at 1dB Gain Compression
22.5
24.0
Gss
OIMD3
Small Signal Gain
Output 3rd Order Intermodulation Distortion
@f=10MHz, Each Tone Pout 12.5dBm
Vdd=7V, Idsq=60%±10%Idss
15.0
17.0
-41
-38
Input RL Input Return Loss
-10 -8
Output RL Output Return Loss
-8 -5
Idss
VDD
Rth
Saturated Drain Current
Drain Voltage
VDS =3V, VGS =0V
Thermal Resistance (Au-Sn Eutectic Attach)
211 264 317
78
34
Tb Operating Base Plate Temperature
-35 +85
UNITS
GHz
dBm
dB
dBc
dB
dB
mA
V
oC/W
ºC
MAXIMUM RATINGS AT 25°C1,2
SYMBOL
CHARACTERISTIC
ABSOLUTE
CONTINUOUS
VDS Drain to Source Voltage
12V
8V
VGS Gate to Source Voltage -8V -4 V
IDD Drain Current
Idss 264
IGSF Forward Gate Current
24mA
4mA
PIN Input Power
20dBm
@ 3dB compression
TCH Channel Temperature
175°C
150°C
TSTG
Storage Temperature
-65/175°C
-65/150°C
PT Total Power Dissipation
4.1W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation VDS*IDS < (TCH –THS)/RTH; where THS = ambient temperature
3.4W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 3
Revised May 2008

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