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PDF RJL5014DPP Data sheet ( Hoja de datos )
| Número de pieza | RJL5014DPP | |
| Descripción | Silicon N Channel MOS FET High Speed Power Switching | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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RJL5014DPP
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Built-in fast recovery diode
• Low on-resistance
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
1
23
G
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
IDNote4
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
Channel to case thermal impedance
θch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
4. Limited by maximum safe operation area
www.DataSheet4U.com
REJ03G1690-0300
Rev.3.00
Jun 13, 2008
D
1. Gate
2. Drain
3. Source
S
Ratings
500
±30
19
57
19
57
4
0.88
35
3.57
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1690-0300 Rev.3.00 Jun 13, 2008
Page 1 of 6
1 page  
RJL5014DPP
10
Normalized Transient Thermal Impedance vs. Pulse Width
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1 D=1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
1shot
pulse
0.001
10 µ
100 µ
Tc = 25°C
θch – c(t) = γ s (t) • θ ch – c
θch – c = 3.57°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10 100
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 250 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
REJ03G1690-0300 Rev.3.00 Jun 13, 2008
Page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RJL5014DPP.PDF ] | |
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