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PDF RJK6029DJA Data sheet ( Hoja de datos )
| Número de pieza | RJK6029DJA | |
| Descripción | Silicon N Channel MOS FET High Speed Power Switching | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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RJK6029DJA
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 13.5 typ. (at ID = 0.1 A, VGS = 10 V, Ta = 25C)
Low drive current
High density mounting
Outline
RENESAS Package code: PRSS0003DA-A
(Package name: TO-92(1))
G
321
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to ambient thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
Pch
ch-a
Tch
Tstg
Preliminary Datasheetwww.DataSheet4U.com
REJ03G1895-0100
Rev.1.00
Jun 18, 2010
D
1. Source
2. Drain
3. Gate
S
Ratings
600
±30
0.2
0.8
0.2
0.8
0.75
166.7
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
C/W
C
C
REJ03G1895-0100 Rev.1.00
Jun 18, 2010
Page 1 of 6
1 page  
RJK6029DJA
3
Normalized Transient Thermal Impedance vs. Pulse Width
Preliminary
www.DataSheet4U.com
1
D=1
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.02
0.01
1shot
pulse
θch – a(t) = γs (t) • θch – a
θch – a = 166.7°C/W, Ta = 25°C
PDM
D=
PW
T
PW
T
0.01
10 μ
100 μ
1m
10 m 100 m
1
Pulse Width PW (s)
10 100 1000
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
V DD
= 300 V
Waveform
Vin
Vout
10%
10%
90%
td(on)
tr
90%
10%
90%
td(off)
tf
REJ03G1895-0100 Rev.1.00
Jun 18, 2010
Page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RJK6029DJA.PDF ] | |
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