(PDF) RJK5026DPP Datasheet - Silicon N Channel MOS FET High Speed Power Switching

Número de pieza	RJK5026DPP
Descripción	Silicon N Channel MOS FET High Speed Power Switching
Fabricantes	Renesas Technology
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No Preview Available ! RJK5026DPP Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) 1 23 G Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage Drain current Drain peak current VGSS IDNote4 ID Note1 (pulse) Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation IDR IDR Note1 (pulse) IAPNote3 EARNote3 Pch Note2 Channel to case thermal impedance θch-c Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C 4. Limited by maximum safe operation area www.DataSheet4U.com REJ03G1734-0100 Rev.1.00 Sep 11, 2008 D 1. Gate 2. Drain 3. Source S Ratings 500 ±30 6 18 6 18 4 0.88 28.5 4.38 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A mJ W °C/W °C °C REJ03G1734-0100 Rev.1.00 Sep 11, 2008 Page 1 of 3 1 page

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