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RJK5014DPK Schematic ( PDF Datasheet ) - Renesas Technology

Teilenummer RJK5014DPK
Beschreibung Silicon N Channel MOS FET High Speed Power Switching
Hersteller Renesas Technology
Logo Renesas Technology Logo 




Gesamt 7 Seiten
RJK5014DPK Datasheet, Funktion
RJK5014DPK
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name:TO-3P)
D
12 3
G
S
www.DataSheet4U.com
REJ03G1458-0200
Rev.2.00
Oct 20, 2009
1. Gate
2. Drain (Flange)
3. Source
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 μs, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
500
±30
19
38
19
38
5
1.3
150
0.833
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1458-0200 Rev.2.00 Oct 20, 2009
Page 1 of 6






RJK5014DPK Datasheet, Funktion
RJK5014DPK
Package Dimensions
Package Name
TO-3P
JEITA Package Code
SC-65
RENESAS Code
PRSS0004ZE-A
15.6 ± 0.3
φ3.2 ± 0.2
Previous Code
TO-3P / TO-3PV
MASS[Typ.]
5.0g
4.8 ± 0.2
1.5
www.DataSheet4U.com
Unit: mm
1.6
1.4 Max
2.0
2.8
1.0 ± 0.2
3.6 0.9
1.0
5.45 ± 0.5
5.45 ± 0.5
0.6 ± 0.2
Ordering Information
Part No.
RJK5014DPK-00-T0
Quantity
360 pcs
Box (Tube)
Shipping Container
REJ03G1458-0200 Rev.2.00 Oct 20, 2009
Page 6 of 6

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