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PDF RJK5012DPE Data sheet ( Hoja de datos )
| Número de pieza | RJK5012DPE | |
| Descripción | Silicon N Channel MOS FET High Speed Power Switching | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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RJK5012DPE
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C)
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
123
G
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
ch-c
Tch
Tstg
Preliminary Datasheetwww.DataSheet4U.com
REJ03G1487-0300
Rev.3.00
May 12, 2010
D
1. Gate
2. Drain
3. Source
4. Drain
S
Ratings
500
30
12
24
12
24
4
0.88
100
1.25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
REJ03G1487-0300 Rev.3.00
May 12, 2010
Page 1 of 6
1 page  
RJK5012DPE
3
1
D=1
Normalized Transient Thermal Impedance vs. Pulse Width
Preliminary
www.DataSheet4U.com
Tc = 25°C
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.02
0.01
1shot
pulse
0.01
10 μ
100 μ
θch – c(t) = γs (t) • θch – c
θch – c = 1.25°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
V DD
= 250 V
Waveform
Vin
Vout
10%
10%
90%
td(on)
tr
90%
10%
90%
td(off)
tf
REJ03G1487-0300 Rev.3.00
May 12, 2010
Page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RJK5012DPE.PDF ] | |
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