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Teilenummer | RJK5013DPK |
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Beschreibung | Silicon N Channel MOS FET High Speed Power Switching | |
Hersteller | Renesas Technology | |
Logo | ||
Gesamt 4 Seiten RJK5013DPK
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name:TO-3P)
D
1
2
3
G
S
www.DataSheet4U.com
REJ03G1491-0100
Rev.1.00
Nov 30, 2006
1. Gate
2. Drain (Flange)
3. Source
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
500
±30
14
42
14
42
4
0.88
100
1.25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.1.00 Nov 30, 2006 page 1 of 3
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ RJK5013DPK Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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RJK5013DPK | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
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