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RJK5003DPD Schematic ( PDF Datasheet ) - Renesas Technology

Teilenummer RJK5003DPD
Beschreibung Silicon N Channel Power MOS FET
Hersteller Renesas Technology
Logo Renesas Technology Logo 




Gesamt 7 Seiten
RJK5003DPD Datasheet, Funktion
RJK5003DPD
Silicon N Channel Power MOS FET
High Speed Power Switching Use
Features
VDSS : 500 V
RDS(on) : 1.5 (MAX.)
ID : 5 A
Surface mount package (MP-3A)
Outline
RENESAS Package code: PRSS0004ZA-A
(Package name : MP-3A)
4
2, 4
12 3
1
3
www.DataSheet4U.com
REJ03G0580-0200
Rev.2.00
Mar 14, 2006
1. Gate
2. Drain
3. Source
4. Drain
Applications
Lighting ballast, SMPS, etc.
Maximum Ratings
Parameter
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain Peak current
Avalanche current
VDSS
VGSS
ID
ID
Note1
(pulse)
IAP
Channel dissipation
Pch
Channel temperature
Tch
Storage temperature
Tstg
Channel to case thermal impedance
θch-c
Note: 1. Pulse width limited by safe operating area.
Ratings
500
±30
5
20
5
62.5
150
–55 to +150
2.0
Unit
V
V
A
A
A
W
°C
°C
°C/W
(Tc = 25°C)
Conditions
VGS = 0 V
VDS = 0 V
L = 200 µH
Channel to case
Rev.2.00, Mar 14, 2006, page 1 of 6






RJK5003DPD Datasheet, Funktion
RJK5003DPD
Package Dimensions
Package Name
MP-3A
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZA-A
Previous Code
MASS[Typ.]
0.32g
6.6
5.3 ± 0.2
0.76 ± 0.2
0.76
2.3 ± 0.2
2.3
0.5 ± 0.2
0.1 ± 0.1
0.5 ± 0.2
www.DataSheet4U.com
Unit: mm
Order Code
Lead form
Standard
packing
Quantity
Standard order code
Standard order
code example
Surface-mounted type Taping
3000
Type name - 00 - direction (J or Q) - 2 RJK5003DPD-00-J2
Note: It is the case of a standard. In addition, please confirm the packing specification for every product about the
contents of packing.
Rev.2.00, Mar 14, 2006, page 6 of 6

6 Page







SeitenGesamt 7 Seiten
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