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RJK0455DPB Schematic ( PDF Datasheet ) - Renesas Technology

Teilenummer RJK0455DPB
Beschreibung Silicon N Channel Power MOS FET
Hersteller Renesas Technology
Logo Renesas Technology Logo 




Gesamt 9 Seiten
RJK0455DPB Datasheet, Funktion
To our customers,
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Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.






RJK0455DPB Datasheet, Funktion
RJK0455DPB
Static Drain to Source on State Resistance
vs. Temperature
10
Pulse Test
ID = 22.5 A
8
6
4 VGS = 10 V
2
0
–25 0 25 50 75 100 125 150
Case Temperature Tc ( °C)
Dynamic Input Characteristics
50
ID = 45 A
20
40
30 VDS
VDD = 25 V
10 V
16
VGS
12
20 8
10
VDD = 25 V
4
10 V
00
0 10 20 30 40 50
Gate Charge Qg (nC)
Maximum Avalanche Energy vs.
Channel Temperature Derating
20
IAP = 45 A
VDD = 15 V
16 duty < 0.1 %
Rg 50 Ω
12
8
4
0
25 50 75 100 125 150
Channel Temperature Tch ( °C)
10000
Preliminary
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Typical Capacitance vs.
Drain to Source Voltage
1000
Ciss
Coss
100 Crss
VGS = 0 V
f = 1 MHz
10
0 10 20 30 40
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
50
10 V
40
Pulse Test
30
20
10 VGS = 0 V
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
REJ03G1878-0200 Rev.2.00 Mar 04, 2010
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