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RJK03E0DNS Schematic ( PDF Datasheet ) - Renesas Technology

Teilenummer RJK03E0DNS
Beschreibung Silicon N Channel Power MOS FET
Hersteller Renesas Technology
Logo Renesas Technology Logo 




Gesamt 7 Seiten
RJK03E0DNS Datasheet, Funktion
RJK03E0DNS
Silicon N Channel Power MOS FET
Power Switching
Preliminary Datasheetwww.DataSheet4U.com
REJ03G1902-0200
Rev.2.00
Apr 06, 2010
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 4.3 mtyp. (at VGS = 10 V)
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008JB-A
(Package name: HWSON-8)
5 6 78
5 678
D DDD
4 321
4
G
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
ch-c Note3
Tch
Tstg
Ratings
30
±20
30
120
30
13
16.9
20
6.25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
REJ03G1902-0200 Rev.2.00
Apr 06, 2010
Page 1 of 6






RJK03E0DNS Datasheet, Funktion
RJK03E0DNS
Package Dimensions
Package Name
JEITA Package Code
HWSON-8 P-HWSON8-2.9x3.1-0.65
RENESAS Code
PWSN0008JB-A
Previous Code
MASS[Typ.]
0.022g
3.3 ± 0.1
0.8 Max
Preliminary
www.DataSheet4U.com
2.25 ± 0.2
0.575 Typ
0.65 Typ
3.1 ± 0.1
0.22 Typ
(2.55)
0.32 ± 0.08
Ordering Information
Part No.
RJK03E0DNS-00-J5
Quantity
5000 pcs
Taping
Shipping Container
REJ03G1902-0200 Rev.2.00
Apr 06, 2010
Page 6 of 6

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