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RJK0379DPA Schematic ( PDF Datasheet ) - Renesas Technology

Teilenummer RJK0379DPA
Beschreibung Silicon N Channel Power MOS FET
Hersteller Renesas Technology
Logo Renesas Technology Logo 




Gesamt 7 Seiten
RJK0379DPA Datasheet, Funktion
Preliminary Datasheetwww.DataSheet4U.com
RJK0379DPA
Silicon N Channel Power MOS FET with Schottky Barrier Diode
Power Switching
REJ03G1826-0210
Rev.2.10
May 13, 2010
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 1.8 mtyp. (at VGS = 10 V)
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008DC-A
(Package name: WPAK(2))
5678
5 678
D DDD
4321
4
G
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
ch-C
Tch
Tstg
Ratings
30
20
50
200
50
31
96
55
2.28
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
REJ03G1826-0210 Rev.2.10
May 13, 2010
Page 1 of 6






RJK0379DPA Datasheet, Funktion
RJK0379DPA
Package Dimensions
Package Name
WPAK(2)
JEITA Package Code
RENESAS Code
PWSN0008DC-A
Previous Code
WPAK(2)V
MASS[Typ.]
0.07g
5.1 ± 0.2
0.8Max
0.04Min
Preliminary
www.DataSheet4U.com
4.21Typ
1.27Typ
Unit: mm
3.9 ± 0.2
0.545Typ
1.27Typ
4.90 ± 0.1
0.2Typ
0.4 ± 0.06
Ordering Information
Part No.
RJK0379DPA-00-J53
Quantity
3000 pcs
(Ni/Pd/Au plating)
Notice:The reverse pattern of die-pad
support lead described above exists.
Taping
Shipping Container
REJ03G1826-0210 Rev.2.10
May 13, 2010
Page 6 of 6

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