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PDF R2J20652ANP Data sheet ( Hoja de datos )

Número de pieza R2J20652ANP
Descripción Integrated Driver - MOS FET (DrMOS)
Fabricantes Renesas Technology 
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Preliminarywww.DataSheet4U.com
R2J20652ANP
Integrated Driver – MOS FET (DrMOS)
REJ03G1867-0300
Rev.3.00
Feb 26, 2010
Description
The R2J20652ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver
in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this
device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap switch, eliminating
the need for an external SBD for this purpose.
Features
Based on Intel 6 6 DrMOS specification pin out
Built-in power MOS FET suitable for Notebook, Desktop, Server application
Low-side MOS FET with built-in SBD for lower loss and reduced ringing
Built-in driver circuit which matches the power MOS FET
Built-in tri-state input function which can support a number of PWM controllers
VIN operating-voltage range: 27 V max
High-frequency operation (above 1 MHz) possible
Large average output current (Max. 35 A)
Achieve low power dissipation
Controllable driver: Remote on/off
Low-side MOS FET disabled function for DCM operation
Built-in bootstrapping switch
Small package: QFN40 (6 mm 6 mm 0.95 mm)
Terminal Pb-free/Halogen-free
Outline
Reg5V
DISBL#
LSDBL#
PWM
VCIN BOOT
Integrated Driver-MOS FET (DrMOS)
QFN40 package 6 mm × 6 mm
GH VIN
1
40
Driver
Pad
10
High-side
MOS Pad
11
MOS FET Driver
VSWH
Low-side MOS Pad
CGND
GL PGND
31
30
(Bottom view)
20
21
REJ03G1867-0300 Rev.3.00 Feb 26, 2010
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R2J20652ANP pdf
R2J20652ANP
Recommended Operating Condition
Item
Input voltage
Supply voltage
Symbol
VIN
VCIN
Rating
4.5 to 22
4.5 to 5.5
or
8 to 22
Preliminary
www.DataSheet4U.com
Units
V
V
Note
When the usage of VCIN = 4.5 V to 5.5 V,
VCIN should be connected to Reg5V
(Refer to "Pin Connection")
Electrical Characteristics
(Ta = 25C, VCIN = 12 V, VSWH = 0 V, unless otherwise specified)
Item
Symbol
Min Typ Max Units
Test Conditions
Supply
VCIN start threshold
VCIN shutdown threshold
UVLO hysteresis
VCIN operating current
VH
VL
dUVL
ICIN
7.0 7.4
7.8
V
6.6 7.0
7.4
V
— 0.4 —
V VH – VL
— 34 — mA fPWM = 1 MHz,
Ton_pwm = 120 ns
VCIN disable current
ICIN-DISBL
— — 2.5 mA DISBL# = 0 V, PWM = 0 V,
LSDBL# = Open
PWM
input
5V
regulator
PWM rising threshold
PWM falling threshold
PWM input resistance
Tri-state shutdown window
Shutdown hold-off time
Output voltage
Line regulation
VH-PWM
VL-PWM
RIN-PWM
VIN-SD
tHOLD-OFF *1
Vreg
Vreg-line
3.0
0.9
10
VL-PWM
4.95
–10
3.4
1.2
20
100
5.2
0
3.8
1.5
40
VH-PWM
5.45
10
V
V
kPWM = 1 V
V
ns
V
mV VCIN = 12 V to 16 V
Load regulation
Vreg-load
–10
0
10 mV Ireg = 0 to 10 mA
DISBL#
input
Disable threshold
Enable threshold
VDISBL
VENBL
0.9 1.2
1.9 2.4
Input current
IDISBL
10 20
LSDBL# Low-side activation threshold
input
Low-side disable threshold
VLSDBLH
VLSDBLL
1.9 2.4
0.9 1.2
Input current
ILSDBL
–56 –28
Note: 1. Reference values for design. Not 100% tested in production.
1.5
2.9
40
2.9
1.5
–14
V
V
A DISBL# = 1 V
V
V
A LSDBL# = 1 V
REJ03G1867-0300 Rev.3.00 Feb 26, 2010
Page 5 of 16

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R2J20652ANP arduino
R2J20652ANP
Power Loss vs. Output Inductance
1.5
VIN = 12 V
VCIN = Reg5V = 5 V
1.4 VOUT = 1.3 V
fPWM = 600 kHz
1.3 IOUT = 25 A
1.2
1.1
1.0
0.9
0.8
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Output Inductance (μH)
Preliminary
www.DataSheet4U.com
Power Loss vs. VCIN
1.5
VIN = 12 V
VOUT = 1.3 V
1.4 fPWM = 600 kHz
L = 0.45 μH
1.3 IOUT = 25 A
1.2
1.1
1.0
0.9
0.8
4.5
5.0 5.5
VCIN = Reg5V (V)
6.0
Average ICIN vs. Switching Frequency
50
VIN = 12 V
VCIN = Reg5V = 5 V
VOUT = 1.3 V
40 L = 0.45 μH
IOUT = 0 A
30
20
10
0
250 500 750 1000 1250
Switching Frequency (kHz)
REJ03G1867-0300 Rev.3.00 Feb 26, 2010
Page 11 of 16

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