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RFU10TF6S Schematic ( PDF Datasheet ) - ROHM Semiconductor

Teilenummer RFU10TF6S
Beschreibung Super Fast Recovery Diode
Hersteller ROHM Semiconductor
Logo ROHM Semiconductor Logo 




Gesamt 4 Seiten
RFU10TF6S Datasheet, Funktion
Super Fast Recovery Diode
RFU10TF6S
Series
Ultra Fast Recovery
Dimentions(Unit : mm)
Applications
General rectification
Features
1)Single type.(TO-220)
2)Ultra High switching speed
Construction
Silicon epitaxial plnner
(1) (3)
www.DataSheet4U.com
Structure
(1) (3)
Absolute maximum ratings(Tc=25C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
Average rectified forward current
VRM
VR
Io
Forward current surge peak
IFSM
Junction temperature
Storage temperature
Tj
Tstg
Conditions
Duty0.5
Direct voltage
60Hz half sin wave, Resistance load, Tc=50C
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25C
Limits
600
600
10
100
150
-55 to +150
Unit
V
V
A
A
C
C
Electrical characteristics(Tj=25C)
Parameter
Symbol
Forward voltage
Reverse current
VF
IR
Reverse recovery time
trr
Thermal Resistance
Rth(j-c)
Conditions
IF=10A
VR=600V
IF=0.5A,IR=1A,Irr=0.25×IR
junction to case
Min. Typ. Max. Unit
- 2.3 2.8 V
- 0.03 10 μA
- 16 25 ns
- - 3.5 C / W
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/3
2010.01 - Rev.A





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