|
|
Teilenummer | RFU10TF6S |
|
Beschreibung | Super Fast Recovery Diode | |
Hersteller | ROHM Semiconductor | |
Logo | ||
Gesamt 4 Seiten Super Fast Recovery Diode
RFU10TF6S
Series
Ultra Fast Recovery
Dimentions(Unit : mm)
Applications
General rectification
Features
1)Single type.(TO-220)
2)Ultra High switching speed
Construction
Silicon epitaxial plnner
(1) (3)
www.DataSheet4U.com
Structure
(1) (3)
Absolute maximum ratings(Tc=25C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
Average rectified forward current
VRM
VR
Io
Forward current surge peak
IFSM
Junction temperature
Storage temperature
Tj
Tstg
Conditions
Duty≦0.5
Direct voltage
60Hz half sin wave, Resistance load, Tc=50C
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25C
Limits
600
600
10
100
150
-55 to +150
Unit
V
V
A
A
C
C
Electrical characteristics(Tj=25C)
Parameter
Symbol
Forward voltage
Reverse current
VF
IR
Reverse recovery time
trr
Thermal Resistance
Rth(j-c)
Conditions
IF=10A
VR=600V
IF=0.5A,IR=1A,Irr=0.25×IR
junction to case
Min. Typ. Max. Unit
- 2.3 2.8 V
- 0.03 10 μA
- 16 25 ns
- - 3.5 C / W
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/3
2010.01 - Rev.A
| ||
Seiten | Gesamt 4 Seiten | |
PDF Download | [ RFU10TF6S Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
RFU10TF6S | Super Fast Recovery Diode | ROHM Semiconductor |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |