(PDF) RF301B2S Datasheet - Fast Recovery Diode

Número de pieza	RF301B2S
Descripción	Fast Recovery Diode
Fabricantes	ROHM Semiconductor
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No Preview Available ! Fast Recovery Diode RF301B2S zApplications General rectification zDimentions(Unit : mm) zFeatures 1)Power mold type(CPD) 2)Ultra Low VF 3)Very fast recovery 4)Low switching loss zConstruction Silicon epitaxial planar ROHM : CPD JEITA : SC-63 Manufacture Date zTaping specifications(Unit : mm) www.DataSheet4U.com zLand size figure(Unit : mm) 6.0 1.6 1.6 CPD 2.3 2.3 zStructure (2) (1) (3) zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(1) VRM VR Io Forward current surge peak (60Hz / 1cyc)(1) Junction temperature IFSM Tj Storage temperature Tstg (1)Bussiness frequencies, Rating of R-load, Tc=128°C MAX. Limits 200 200 3 40 150 -55 to +150 Unit V V A A °C °C zElectrical characteristics(Ta=25°C) Parameter Forward voltage Reverse current Reverse recovery time Thermal impedance www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. Symbol Min. Typ. Max. VF - 0.87 0.93 IR - 10nA 10 trr - 14 25 θjc - - 6 Unit V µA ns °C/W Conditions IF=3A VR=200V IF=0.5A,IR=1A,Irr=0.25IR JUNCTION TO CASE 1/3 2009.11 - Rev.D 1 page

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PDF RF301B2S Data sheet ( Hoja de datos )