|
|
Teilenummer | RF2L6S |
|
Beschreibung | Super Fast Recovery Diode | |
Hersteller | ROHM Semiconductor | |
Logo | ||
Gesamt 3 Seiten www.DataSheet4U.com
Super Fast Recovery Diode
RF2L6S
Series
Standard Fast Recovery
Applications
General rectification
Features
1)Small power mold type. (MDS)
2)High switching speed
3)Low forward voltage
Dimensions (Unit : mm)
2.6±0.2
68 62
①②
0.1±0.02
0.1
1.5±0.2
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
Manufacture date
Construction
Silicon epitaxial planar
Taping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
Land size figure (Unit : mm)
2.0
PMDS
Structure
φ1.55±0.05
0.3
2.9±0.1
4.0±0.1
Absolute maximum ratings (Tl=25C)
Parameter
Symbol
Limits
Unit
Repetitive peak Reverse voltage VRM 600 V
Reverse voltage
VR 600 V
Average rectified forward
current(*1)
Io
1.5 A
Forward current surge peak
(60Hz,1cyc,Tj=25C)
IFSM
40
A
Junction temperature
Storage temperature
Tj 150 C
Tstg -55to+150 C
(*1) Half sinwave on the Glass epoxy substrate (size : 50mm×50mm),Tc=90 CMax.
Electrical characteristics (Tj=25C)
Parameter
Symbol
Conditions
Forward voltage
VF
IF=1.5A
Reverse current
Reverse recovery time
Thermal Resistance
IR
trr
Rth (j-l)
VR=600V
IF=0.5A,IR=1A,Irr=0.25×IR
junction to lead
Min.
-
-
-
-
Typ.
1.25
0.03
20
-
φ1.55
Max.
1.55
10
35
23
Unit
V
μA
ns
C/W
2.8MAX
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/2
2010.05 - Rev.B
| ||
Seiten | Gesamt 3 Seiten | |
PDF Download | [ RF2L6S Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
RF2L6S | Super Fast Recovery Diode | ROHM Semiconductor |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |