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RF2L6S Schematic ( PDF Datasheet ) - ROHM Semiconductor

Teilenummer RF2L6S
Beschreibung Super Fast Recovery Diode
Hersteller ROHM Semiconductor
Logo ROHM Semiconductor Logo 




Gesamt 3 Seiten
RF2L6S Datasheet, Funktion
www.DataSheet4U.com
Super Fast Recovery Diode
RF2L6S
Series
Standard Fast Recovery
Applications
General rectification
Features
1)Small power mold type. (MDS)
2)High switching speed
3)Low forward voltage
Dimensions (Unit : mm)
2.6±0.2
68 62
①②
0.1±0.02
    0.1
1.5±0.2
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
  Manufacture date
Construction
Silicon epitaxial planar
Taping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
Land size figure (Unit : mm)
2.0
PMDS
Structure
φ1.55±0.05
0.3
2.9±0.1
4.0±0.1
Absolute maximum ratings (Tl=25C)
Parameter
Symbol
Limits
Unit
Repetitive peak Reverse voltage VRM 600 V
Reverse voltage
VR 600 V
Average rectified forward
current(*1)
Io
1.5 A
Forward current surge peak
(60Hz,1cyc,Tj=25C)
IFSM
40
A
Junction temperature
Storage temperature
Tj 150 C
Tstg -55to+150 C
(*1) Half sinwave on the Glass epoxy substrate (size : 50mm×50mm),Tc=90 CMax.
Electrical characteristics (Tj=25C)
Parameter
Symbol
Conditions
Forward voltage
VF
IF=1.5A
Reverse current
Reverse recovery time
Thermal Resistance
IR
trr
Rth (j-l)
VR=600V
IF=0.5A,IR=1A,Irr=0.25×IR
junction to lead
Min.
-
-
-
-
Typ.
1.25
0.03
20
-
φ1.55
Max.
1.55
10
35
23
Unit
V
μA
ns
C/W
2.8MAX
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/2
2010.05 - Rev.B





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