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Teilenummer | RB520ZS-30 |
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Beschreibung | Schottky barrier diode | |
Hersteller | ROHM Semiconductor | |
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Gesamt 4 Seiten Diodes
Schottky Barrier Diode
RB520ZS-30
zApplications
General rectification
zDimensions (Unit : mm)
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RB520ZS-30
zFeatures
1) Ultra small mold type.(GMD2)
2) Low IR
3) High reliability
A
0~0.03
zConstruction
Silicon epitaxial planar
0.3±0.05
0.3±0.03
zLand size figure (Unit : mm)
0.31
0.27±0.03
zStructure
ROHM : GMD2
JEDEC : -
JEITA : -
dot(year week factory)
GMD2
zTaping dimensions (Unit : mm)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz・1cyc)
Junction temperature
Storage temperature
Symbol
VR
Io
IFSM
Tj
Tstg
Limits
30
100
500
150
-40 to +150
Unit
V
mA
mA
℃
℃
zElectrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol
VF
IR
Min.
-
-
Typ.
-
-
Max.
0.46
0.3
Unit Conditions
V IF=10mA
µA VR=10V
Rev.C
1/3
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ RB520ZS-30 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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