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DMN26D0UDJ Schematic ( PDF Datasheet ) - Diodes

Teilenummer DMN26D0UDJ
Beschreibung DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Hersteller Diodes
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Gesamt 5 Seiten
DMN26D0UDJ Datasheet, Funktion
Features
Dual N-Channel MOSFET
Low On-Resistance:
3.0 Ω @ 4.5V
4.0 Ω @ 2.5V
6.0 Ω @ 1.8V
10 Ω @ 1.5V
Very Low Gate Threshold Voltage, 1.0V max
Low Input Capacitance
Fast Switching Speed
Ultra-Small Surface Mount Package
ESD Protected Gate (HBM 300V)
Lead, Halogen, and Antimony Free By Design/RoHS
Compliant (Note 2)
"Green" Device (Note 3)
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DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
Case: SOT-963
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.0027 grams (approximate)
SOT-963
D1 G2 S2
ESD PROTECTED
TOP VIEW
S1 G1 D2
TOP VIEW
Schematic and Transistor Diagram
Maximum Ratings @TA = 25°C unless otherwise specified
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current
Characteristic
TP = 10µs
Symbol
VDSS
VGSS
ID
IDM
Value
20
±10
230
805
Unit
V
V
mA
mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
PD
RθJA
TJ, TSTG
300
417
-55 to +150
mW
°C/W
°C
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMN26D0UDJ
Document number: DS31481 Rev. 4 - 2
1 of 5
www.diodes.com
May 2010
© Diodes Incorporated





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