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PDF DMN6066SSD Data sheet ( Hoja de datos )

Número de pieza DMN6066SSD
Descripción 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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No Preview Available ! DMN6066SSD Hoja de datos, Descripción, Manual

A Product Line of
Diodes Incorporatwewdw.DataSheet4U.com
DMN6066SSD
60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
60V
RDS(on)
66mΩ @ VGS= 10V
97mΩ @ VGS= 4.5V
ID
TA = 25°C
4.4A
3.6A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
Motor control
Backlighting
DC-DC Converters
Power management functions
Features and Benefits
Low on-resistance
Fast switching speed
“Green” component and RoHS compliant (Note 1)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See diagram below
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
SO-8
D1 D2
Top View
Top View
G1 G2
S1
Equivalent Circuit
S2
Ordering Information (Note 1)
Product
DMN6066SSD-13
Marking
N6066SD
Reel size (inches)
13
Tape width (mm)
12
Quantity per reel
2,500
Note:
1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about
Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
N6066SD
YY WW
= Manufacturer’s Marking
N6066SD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-53)
DMN6066SSD
Document Number DS32109 Rev 1 - 2
1 of 8
www.diodes.com
March 2010
© Diodes Incorporated

1 page




DMN6066SSD pdf
Typical Characteristics
A Product Line of
Diodes Incorporatwewdw.DataSheet4U.com
DMN6066SSD
T = 25°C
10
1
10V
4.5V
4V
3.5V
0.1 3V
V
GS
0.01
0.1 1
10
V Drain-Source Voltage (V)
DS
Output Characteristics
T = 150°C
10
1
10V
4.5V
4V
3.5V
3V
0.1 2.5V
V
GS
2V
0.01
0.1 1 10
V Drain-Source Voltage (V)
DS
Output Characteristics
10 V = 10V
DS
1
T = 150°C
0.1
0.01
T = 25°C
1E-3
1234
V Gate-Source Voltage (V)
GS
Typical Transfer Characteristics
2.0 V = 10V
GS
1.8 I = 12A
D
1.6 R
DS(on)
1.4
1.2
1.0
0.8
V =V
V
GS(th)
GS DS
0.6 I = 250uA
D
0.4
5 -50 0 50 100 150
Tj Junction Temperature (°C)
Normalised Curves v Temperature
100
3V
10
3.5V
V
GS
1 4V
0.1 4.5V
10V
T = 25°C
0.01
0.01
0.1
1
10
I Drain Current (A)
D
On-Resistance v Drain Current
10
T = 150°C
1
0.1
T = 25°C
Vgs = 0V
0.01
0.2 0.4 0.6 0.8 1.0
V Source-Drain Voltage (V)
SD
Source-Drain Diode Forward Voltage
DMN6066SSD
Document Number DS32109 Rev 1 - 2
5 of 8
www.diodes.com
March 2010
© Diodes Incorporated

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