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PDF DMG1016V Data sheet ( Hoja de datos )
| Número de pieza | DMG1016V | |
| Descripción | COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de DMG1016V (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Features
• Low On-Resistance
• Low Gate Threshold Voltage VGS(th) <1V
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Complementary Pair MOSFET
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• ESD Protected Gate to 2.5kV HBM
• "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
www.DDataMSheGet41U0.co1m6V
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 7
• Ordering Information: See Page 7
• Weight: 0.006 grams (approximate)
SOT-563
D1 G2 S2
Q1 Q2
ESD PROTECTED TO 2.5kV HBM
TOP VIEW
BOTTOM VIEW
S1 G1 D2
TOP VIEW
Internal Schematic
Maximum Ratings N-CHANNEL – Q1 @TA = 25°C unless otherwise specified
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
TA = 25°C
TA = 85°C
Symbol
VDSS
VGSS
ID
Value
20
±6
870
630
Unit
V
V
mA
Maximum Ratings P-CHANNEL – Q2 @TA = 25°C unless otherwise specified
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
TA = 25°C
TA = 85°C
Symbol
VDSS
VGSS
ID
Value
-20
±6
-640
-460
Unit
V
V
mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
530
235
-55 to +150
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Unit
mW
°C/W
°C
DMG1016V
Document number: DS31767 Rev. 3 - 2
1 of 8
www.diodes.com
May 2009
© Diodes Incorporated
1 page  
P-CHANNEL – Q2
1.0 VGS = -8.0V
VGS = -4.5V
0.8
VGS = -3.0V
0.6 VGS = -2.5V
VGS = -2.0V
0.4
1.0
VDS = -5V
0.8
0.6
0.4
www.DDataMSheGet41U0.co1m6V
0.2 VGS = -1.5V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Output Characteristic
1.6
1.4
1.2
VGS = -1.8V
1.0
0.8
0.6 VGS = -2.5V
0.4
0.2
0
0
1.7
VGS = -4.5V
0.2 0.4 0.6 0.8
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 14 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.0
0.2
0
0
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0.5 1.0 1.5 2.0 2.5
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 13 Typical Transfer Characteristic
3.0
1.0
VGS = -4.5V
0.8
TA = 150°C
TA = 125°C
0.6
TA = 85°C
TA = 25°C
0.4
TA = -55°C
0.2
0
0
1.0
0.2 0.4 0.6 0.8
-ID, DRAIN CURRENT (A)
Fig. 15 Typical On-Resistance
vs. Drain Current and Temperature
1.0
1.5
1.3
1.1
VGS = -4.5V
ID = -500mA
0.9
0.8
VGS = -2.5V
ID = -250mA
0.6
0.4 VGS = -4.5V
ID = -500mA
0.7
VGS = -2.5V
ID = -250mA
0.2
0.5
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 16 On-Resistance Variation with Temperature
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 17 On-Resistance Variation with Temperature
DMG1016V
Document number: DS31767 Rev. 3 - 2
5 of 8
www.diodes.com
May 2009
© Diodes Incorporated
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet DMG1016V.PDF ] | |
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