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PDF EID1414A1-12 Data sheet ( Hoja de datos )
| Número de pieza | EID1414A1-12 | |
| Descripción | 14.00-14.50 GHz 12-Watt Internally Matched Power FET | |
| Fabricantes | Excelics Semiconductor | |
| Logotipo |  |
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UPDATED 07/12/2007
www.DataSheet4U.com
EID1414A1-12
14.00-14.50 GHz 12-Watt Internally Matched Power FET
FEATURES
• 14.00-14.50 GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +41.0 dBm Output Power at 1dB Compression
• 6.0 dB Power Gain at 1dB Compression
• 23% Power Added Efficiency
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
.827±.010 .669
Excelics
EID1414A1-12
.120 MIN YYWW
SN
.024
.421
.120 MIN
.168±.010
.125
.508±.008
.442
ALL DIMENSIONS IN INCHES
.004
.063
.004
.105±.008
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
P1dB
G1dB
∆G
PAE
Id1dB
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 14.00-14.50GHz
VDS = 10 V, IDSQ ≈ 3200mA
Gain at 1dB Compression
f = 14.00-14.50GHz
VDS = 10 V, IDSQ ≈ 3200mA
Gain Flatness
f = 14.00-14.50GHz
VDS = 10 V, IDSQ ≈ 3200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 3200mA
f = 14.00-14.50GHz
Drain Current at 1dB Compression f = 14.00-14.50GHz
MIN
40.0
5.0
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance2
Notes:
1. Tested with 50 Ohm gate resistor.
2. Overall Rth depends on case mounting.
VDS = 3 V, IDS = 64 mA
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
CHARACTERISTIC
VALUE
VDS Drain to Source Voltage
10 V
VGS Gate to Source Voltage
-4.5 V
IDS Drain Current
IDSS
IGSF Forward Gate Current
220 mA
PIN Input Power
@ 3dB compression
PT Total Power Dissipation
35 W
TCH Channel Temperature
150°C
TSTG
Storage Temperature
-65/+150°C
Notes: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
TYP
41.0
6.0
23
3960
5900
-1.2
2.5
MAX
±0.6
5100
8200
-2.5
3.5
UNITS
dBm
dB
dB
%
mA
mA
V
oC/W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised July 2007
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