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Teilenummer | EID1314A1-5 |
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Beschreibung | 13.75-14.50 GHz 5-Watt Internally-Matched Power FET | |
Hersteller | Excelics Semiconductor | |
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Gesamt 4 Seiten UPDATED 07/12/2007
www.DataSheet4U.com
EID1314A1-5
13.75-14.50 GHz 5-Watt Internally-Matched Power FET
FEATURES
• 13.75-14.50 GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +37.5 dBm Output Power at 1dB Compression
• 7.5 dB Power Gain at 1dB Compression
• 35% Power Added Efficiency
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
DESCRIPTION
The EID1314A1-5 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics’ unique
PHEMT transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression f = 13.75-14.50GHz
VDS = 10 V, IDSQ = 1200mA
Gain at 1dB Compression
f = 13.75-14.50GHz
VDS = 10 V, IDSQ = 1200mA
Gain Flatness
f = 13.75-14.50GHz
VDS = 10 V, IDSQ = 1200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ = 1200mA
f = 13.75-14.50GHz
Id1dB
Drain Current at 1dB Compression f = 13.75-14.50GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance2
Notes:
1. Tested with 100 Ohm gate resistor.
2. Overall Rth depends on case mounting.
VDS = 3 V, IDS = 20 mA
MIN
37.0
6.5
TYP
37.5
7.5
35
1400
2080
-2.5
5.5
MAX
UNITS
dBm
dB
±0.6 dB
%
1800 mA
2880 mA
-4.0 V
6.0 oC/W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised July 2007
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ EID1314A1-5 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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