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PDF EID1112A1-5 Data sheet ( Hoja de datos )
| Número de pieza | EID1112A1-5 | |
| Descripción | 11.70-12.70 GHz 5-Watt Internally Matched Power FET | |
| Fabricantes | Excelics Semiconductor | |
| Logotipo |  |
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UPDATED 07/12/2007
www.DataSheet4U.com
EID1112A1-5
11.70-12.70 GHz 5-Watt Internally Matched Power FET
FEATURES
• 11.70-12.70 GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +37.5 dBm Output Power at 1dB Compression
• 8.0 dB Power Gain at 1dB Compression
• 35% Power Added Efficiency
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
.060 MIN.
.650±.008 .512
GATE
Excelics
EID1112A1-5
YYWW
.060 MIN.
DRAIN
.022
.319
SN
.094
.382
.045
.004 .070 ±.008
.129
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
P1dB
G1dB
∆G
PAE
Id1dB
IDSS
VP
RTH
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 11.70-12.70GHz
VDS = 10 V, IDSQ ≈ 1200mA
Gain at 1dB Compression
f = 11.70-12.70GHz
VDS = 10 V, IDSQ ≈ 1200mA
Gain Flatness
f = 11.70-12.70GHz
VDS = 10 V, IDSQ ≈ 1200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 1200mA
f = 11.70-12.70GHz
Drain Current at 1dB Compression f = 11.70-12.70GHz
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance3
VDS = 3 V, VGS = 0 V
VDS = 3 V, IDS = 24 mA
Notes: 1. Tested with 100 Ohm gate resistor.
2. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
CHARACTERISTIC
VALUE
VDS Drain to Source Voltage
10 V
VGS Gate to Source Voltage
-3.0 V
IDS Drain Current
IDSS
IGSF Forward Gate Current
40 mA
PIN Input Power
@ 3dB compression
PT Total Power Dissipation
20 W
TCH Channel Temperature
150°C
TSTG
Storage Temperature
-65/+150°C
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
MIN
37.0
7.0
TYP
37.5
8.0
35
1400
2300
-1.2
5.5
MAX
±0.6
1800
2800
-2.5
6.0
UNITS
dBm
dB
dB
%
mA
mA
V
oC/W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised July 2007
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet EID1112A1-5.PDF ] | |
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