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PDF A8732 Data sheet ( Hoja de datos )
| Número de pieza | A8732 | |
| Descripción | Ultra Small Mobile Phone Xenon Photoflash Capacitor Charger | |
| Fabricantes | Allegro Micro Systems | |
| Logotipo |  |
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A8732www.DataSheet4U.com
Ultra Small Mobile Phone Xenon Photoflash
Capacitor Charger with IGBT Driver
Features and Benefits
▪ Ultra small 2 × 2 DFN/MLP-8 package
▪ Low quiescent current draw (0.5 μA max. in shutdown mode)
▪ Primary-side output voltage sensing; no resistor divider required
▪ Adjustable switch peak current limit up to 1.5 A with
single-wire programming through the CHARGE pin
▪ 1V logic (VHI(min)) compatibility
▪ Integrated IGBT driver with internal gate resistors
▪ Optimized for mobile phone, 1-cell Li+ battery applications
▪ Zero-voltage switching for lower loss
▪ >75% efficiency
▪ Charge complete indication
▪ Integrated 50 V DMOS switch with self-clamping
protection
Package: 8-pin DFN/MLP (suffix EE)
Description
The Allegro® A8732 is a Xenon photoflash charger IC designed
to meet the needs of ultra low power, small form factor cameras,
particularly camera phones. By using primary-side voltage
sensing, the need for a secondary-side resistive voltage divider
is eliminated. This has the additional benefit of reducing leakage
currents on the secondary side of the transformer. To extend
battery life, the A8732 features very low supply current draw
(0.5 μA max in shutdown mode). The switch current limit can
be programmed from 0.45 to 1.5 A, in 16 steps with single wire
interface, through the CHARGE pin.
The IGBT driver also has internal gate resistors for minimum
external component count. The charge and trigger voltage
logic thresholds are set at 1 VHI(min) to support applications
implementing low-voltage control logic.
The A8732 is available in an 8-contact 2 mm × 2 mm
DFN/MLP package with a 0.60 maximum overall package
height, and an exposed pad for enhanced thermal performance.
It is lead (Pb) free with 100% matte tin leadframe plating.
Not to scale
2 mm × 2 mm, 0.60 mm height
VIN_VDRV
C2
CHARGE
TRIG
Typical Applications
Battery Input +
2.3 to 5.5 V
C1
VBAT
VOUT Detect
SW
Control
Block
ISW sense
COUT
100F
315 V
VPULLUP
DONE
100 kΩ
DONE
VIN_VDRV
IGBT Driver
IGBT Gate
GATE
VIN_VDRV
C2
CHARGE
TRIG
Battery Input +
1.5 to 5.5 V
C1
VBAT
VOUT Detect
SW
Control
Block
ISW sense
COUT
100F
315 V
VPULLUP
DONE
100 kΩ
DONE
VIN_VDRV
IGBT Driver
IGBT Gate
GATE
GND
GND
(A)
Figure 1. Typical applications: (A) with single battery supply and (B) with separate bias supply
(B)
8732-DS
1 page  
A8732
Ultra Small Mobile Phone Xenon Photoflashwww.DataSheet4U.com
Capacitor Charger with IGBT Driver
ELECTRICAL CHARACTERISTICS (Continued) Typical values are valid at VIN = VBAT = 3.6 V; TA = 25°C, except indicates
specifications guaranteed from −40°C to 85°C ambient, unless otherwise noted
Switch On-Resistance
RSWDS(on) VIN_DRV = 3.6 V, ID = 600 mA, TA = 25°C
– 0.4 –
Ω
Switch Leakage Current
ISWLK
VSW = 5.5, over full temperature range
(note 1)
– – 2 μA
CHARGE Pull-down Resistance
CHARGE Input Voltage
RCHGPD
VCHARGE
High, over input supply range (note 1)
Low, over input supply range (note 1)
– 100 –
1.0 –
–
– – 0.4
kΩ
V
V
Charge Pin Programming
ILIM Programming High at CHARGE Pin
ILIM Programming Low at CHARGE Pin
Total ILIM Setup Time at CHARGE Pin
Switch-Off Timeout
Switch-On Timeout
Output Comparator Trip Voltage
Output Comparator Voltage Overdrive
¯D¯¯O¯¯N¯¯E¯ Leakage Current
¯D¯¯O¯¯N¯¯E¯ Output Low Voltage
dV/dt Threshold for ZVS Comparator
tILIM(H)init
tILIM(H)
tILIM(L)
tILIM(SU)
toff(max)
ton(max)
VOUTTRIP
VOUTOV
IDONELK
VDONEL
dV/dt
Initial Pulse (note 3)
Subsequent Pulses (note 3)
(note 3)
(note 3)
Measured as VSW – VBAT (note 4)
Pulse width = 200 ns (90% to 90%)
(note 1)
32 μA into ¯D¯¯O¯¯N¯¯E¯ pin (note 1)
Measured at SW pin
15 –
– μs
0.2 –
– μs
0.2 –
– μs
– 200 –
μs
– 18 – μs
– 18 – μs
31 31.5 32
V
– 200 400 mV
1 μA
– – 100 mV
– 20 – V/μs
IGBT Driver
TRIG Input Voltage
VTRIG(H)
VTRIG(L)
Input = logic high, over input supply range
(note 1)
Input = logic low, over input supply range
(note 1)
TRIG Pull-Down Resistor
RTRIGPD
GATE Resistance to VIN_DRV
RSrcDS(on) VGATE = 1.8 V
GATE Resistance to GND
RSnkDS(on) VGATE = 1.8 V
Propagation Delay (Rising)
tDr
Measurement taken at GATE pin,
CL= 6500 pF (notes 3, 5)
Propagation Delay (Falling)
tDf (notes 3, 5)
Output Rise Time
tr (notes 3, 5)
Output Fall Time
tf (notes 3, 5)
GATE Pull-Down Resistor
RGTPD
1 Specifications throughout the range TA = –40°C to 85°C guaranteed by design and characterization.
2Current limit guaranteed by design and correlation to static test.
3Guaranteed by design and characterization.
4Specifications throughout the range TA = –20°C to 85°C guaranteed by design and characterization.
5See IGBT Drive Timing Definition diagram for further information.
1.0 – – V
– – 0.4 V
– 100 –
– 21 –
– 27 –
kΩ
Ω
Ω
– 25 – ns
– 60 –
– 290 –
– 380 –
– 20 –
ns
ns
ns
kΩ
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
5
5 Page 
A8732
Ultra Small Mobile Phone Xenon Photoflashwww.DataSheet4U.com
Capacitor Charger with IGBT Driver
Charging Waveforms
Output Capacitor Charging at Various Peak Current Limits
Test conditions: VIN = 3.0 V, VBAT = 3.7 V, COUT = 100 μF / 330 V UCC, transformer = T-16-024A (LPRIMARY =12.8 μH, N = 10.25), at room temperature
Oscilloscope settings: Ch1 = ¯D¯¯O¯¯N¯¯E¯ (5 V / div), Ch2 = Output Voltage (50 V / div), Ch3 = Input Current (100 mA / div), Time scale = 1 sec / div
VOUT
ILIM1 (1.5 A)
C2,C3
C1
IIN
VDONE
VOUT
ILIM5 (1.22 A)
C2,C3
C1
IIN
VDONE
VOUT
ILIM9 (0.93 A)
C2,C3
C1
IIN
VDONE
VOUT
ILIM11 (0.79 A)
IIN
C2,C3
C1
VDONE
t
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
11
11 Page | ||
| Páginas | Total 20 Páginas | |
| PDF Descargar | [ Datasheet A8732.PDF ] | |
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