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PBSS5630PA Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer PBSS5630PA
Beschreibung 6 A PNP low VCEsat (BISS) transistor
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 15 Seiten
PBSS5630PA Datasheet, Funktion
PBSS5630PA
30 V, 6 A PNP low VCEsat (BISS) transistor
Rev. 01 — 19 March 2010
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra
thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
NPN complement: PBSS4630PA.
1.2 Features and benefits
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Exposed heat sink for excellent thermal and electrical conductivity
Leadless small SMD plastic package with medium power capability
1.3 Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
RCEsat
collector-emitter
saturation resistance
[1] Pulse test: tp 300 s;   0.02.
Conditions
open base
single pulse;
tp 1 ms
IC = 6 A;
IB = 300 mA
Min Typ Max Unit
- - 30 V
- - 6 A
- - 7 A
[1] -
39 58 m






PBSS5630PA Datasheet, Funktion
NXP Semiconductors
www.DataSheet4U.com
PBSS5630PA
30 V, 6 A PNP low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
ICES
collector-base
cut-off current
collector-emitter
cut-off current
VCB = 24 V; IE = 0 A
VCB = 24 V; IE = 0 A;
Tj = 150 C
VCE = 24 V; VBE = 0 V
IEBO emitter-base
cut-off current
VEB = 5 V; IC = 0 A
hFE
DC current gain
VCE = 2 V
VCEsat
RCEsat
collector-emitter
saturation voltage
collector-emitter
saturation resistance
IC = 0.5 A
IC = 1 A
IC = 2 A
IC = 6 A
IC = 0.5 A; IB = 50 mA
IC = 1 A; IB = 50 mA
IC = 1 A; IB = 10 mA
IC = 2 A; IB = 20 mA
IC = 3 A; IB = 30 mA
IC = 4 A; IB = 400 mA
IC = 6 A; IB = 300 mA
IC = 6 A; IB = 300 mA
VBEsat
VBEon
base-emitter
saturation voltage
base-emitter
turn-on voltage
IC = 1 A; IB = 10 mA
IC = 6 A; IB = 300 mA
VCE = 2 V; IC = 2 A
td delay time
tr rise time
ton turn-on time
ts storage time
VCC = 9 V; IC = 2 A;
IBon = 0.1 A;
IBoff = 0.1 A
tf fall time
toff turn-off time
fT transition frequency VCE = 10 V;
IC = 100 mA;
f = 100 MHz
Cc collector capacitance VCB = 10 V;
IE = ie = 0 A; f = 1 MHz
Min
-
-
-
-
[1]
230
220
190
110
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
-
-
-
-
-
-
50
-
[1] Pulse test: tp 300 s;   0.02.
Typ Max Unit
- 100 nA
- 50 A
- 100 nA
- 100 nA
345
320
275
155
25
50
80
135
215
150
235
39
-
-
-
-
40
80
130
210
325
230
350
58
mV
mV
mV
mV
mV
mV
mV
m
0.75 0.9
1.03 1.1
0.76 0.9
V
V
V
19 -
59 -
78 -
265 -
55 -
320 -
80 -
ns
ns
ns
ns
ns
ns
MHz
75 90 pF
PBSS5630PA_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 19 March 2010
© NXP B.V. 2010. All rights reserved.
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PBSS5630PA pdf, datenblatt
NXP Semiconductors
12. Revision history
Table 9. Revision history
Document ID
Release date
PBSS5630PA_1
20100319
Data sheet status
Product data sheet
www.DataSheet4U.com
PBSS5630PA
30 V, 6 A PNP low VCEsat (BISS) transistor
Change notice
-
Supersedes
-
PBSS5630PA_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 19 March 2010
© NXP B.V. 2010. All rights reserved.
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