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Teilenummer | PBSS4032PX |
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Beschreibung | 4.2 A PNP low VCEsat (BISS) transistor | |
Hersteller | NXP Semiconductors | |
Logo | ||
Gesamt 15 Seiten www.DataSheet4U.com
PBSS4032PX
30 V, 4.2 A PNP low VCEsat (BISS) transistor
Rev. 01 — 1 April 2010
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and
flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4032NX.
1.2 Features and benefits
Very low collector-emitter saturation voltage VCEsat
Optimized switching time
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
AEC-Q101 qualified
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
peak collector current
collector-emitter
saturation resistance
single pulse;
tp ≤ 1 ms
IC = −4 A;
IB = −400 mA
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Min Typ Max Unit
- - −30 V
- - −4.2 A
- - −10 A
[1] -
58 86 mΩ
NXP Semiconductors
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PBSS4032PX
30 V, 4.2 A PNP low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
ICES
collector-base cut-off
current
collector-emitter
cut-off current
VCB = −30 V; IE = 0 A
VCB = −30 V; IE = 0 A;
Tj = 150 °C
VCE = −24 V; VBE = 0 V
IEBO emitter-base cut-off VEB = −5 V; IC = 0 A
current
hFE DC current gain VCE = −2 V
IC = −500 mA
IC = −1 A
IC = −2 A
IC = −4 A
VCEsat
RCEsat
collector-emitter
saturation voltage IC = −1 A; IB = −50 mA
IC = −1 A; IB = −10 mA
IC = −2 A; IB = −40 mA
IC = −4 A; IB = −400 mA
IC = −4 A; IB = −200 mA
collector-emitter
IC = −4 A; IB = −400 mA
saturation resistance
VBEsat
VBEon
base-emitter
saturation voltage
base-emitter turn-on
voltage
IC = −1 A; IB = −50 mA
IC = −4 A; IB = −400 mA
VCE = −2 V; IC = −2 A
td delay time
tr rise time
ton turn-on time
VCC = −12.5 V;
IC = −1 A; IBon = −0.05 A;
IBoff = 0.05 A
ts storage time
tf fall time
toff turn-off time
fT transition frequency VCE = −10 V;
IC = −100 mA;
f = 100 MHz
Cc collector capacitance VCB = −10 V;
IE = ie = 0 A; f = 1 MHz
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Min
-
-
-
-
[1]
200
200
150
60
[1]
-
-
-
-
-
[1] -
[1] -
[1] -
[1] -
-
-
-
-
-
-
-
-
Typ Max Unit
- −100 nA
- −50 μA
- −100 nA
- −100 nA
350 -
320 -
240 -
100 -
−110
−160
−200
−230
−270
58
−165
−240
−300
−345
−400
86
mV
mV
mV
mV
mV
mΩ
−0.78
−1.02
−0.81
−0.9
−1.1
−0.9
V
V
V
30 -
60 -
90 -
140 -
80 -
220 -
115 -
ns
ns
ns
ns
ns
ns
MHz
85 -
pF
PBSS4032PX_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 1 April 2010
© NXP B.V. 2010. All rights reserved.
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PBSS4032PX
30 V, 4.2 A PNP low VCEsat (BISS) transistor
12. Revision history
Table 9. Revision history
Document ID
Release date
PBSS4032PX_1
20100401
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PBSS4032PX_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 1 April 2010
© NXP B.V. 2010. All rights reserved.
12 of 15
12 Page | ||
Seiten | Gesamt 15 Seiten | |
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