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PBSS4032PX Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer PBSS4032PX
Beschreibung 4.2 A PNP low VCEsat (BISS) transistor
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 15 Seiten
PBSS4032PX Datasheet, Funktion
www.DataSheet4U.com
PBSS4032PX
30 V, 4.2 A PNP low VCEsat (BISS) transistor
Rev. 01 — 1 April 2010
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and
flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4032NX.
1.2 Features and benefits
„ Very low collector-emitter saturation voltage VCEsat
„ Optimized switching time
„ High collector current capability IC and ICM
„ High collector current gain (hFE) at high IC
„ High energy efficiency due to less heat generation
„ AEC-Q101 qualified
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
„ Battery-driven devices
„ Power management
„ Charging circuits
„ Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
peak collector current
collector-emitter
saturation resistance
single pulse;
tp 1 ms
IC = 4 A;
IB = 400 mA
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
Min Typ Max Unit
- - 30 V
- - 4.2 A
- - 10 A
[1] -
58 86 mΩ






PBSS4032PX Datasheet, Funktion
NXP Semiconductors
www.DataSheet4U.co
PBSS4032PX
30 V, 4.2 A PNP low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
ICES
collector-base cut-off
current
collector-emitter
cut-off current
VCB = 30 V; IE = 0 A
VCB = 30 V; IE = 0 A;
Tj = 150 °C
VCE = 24 V; VBE = 0 V
IEBO emitter-base cut-off VEB = 5 V; IC = 0 A
current
hFE DC current gain VCE = 2 V
IC = 500 mA
IC = 1 A
IC = 2 A
IC = 4 A
VCEsat
RCEsat
collector-emitter
saturation voltage IC = 1 A; IB = 50 mA
IC = 1 A; IB = 10 mA
IC = 2 A; IB = 40 mA
IC = 4 A; IB = 400 mA
IC = 4 A; IB = 200 mA
collector-emitter
IC = 4 A; IB = 400 mA
saturation resistance
VBEsat
VBEon
base-emitter
saturation voltage
base-emitter turn-on
voltage
IC = 1 A; IB = 50 mA
IC = 4 A; IB = 400 mA
VCE = 2 V; IC = 2 A
td delay time
tr rise time
ton turn-on time
VCC = 12.5 V;
IC = 1 A; IBon = 0.05 A;
IBoff = 0.05 A
ts storage time
tf fall time
toff turn-off time
fT transition frequency VCE = 10 V;
IC = 100 mA;
f = 100 MHz
Cc collector capacitance VCB = 10 V;
IE = ie = 0 A; f = 1 MHz
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
Min
-
-
-
-
[1]
200
200
150
60
[1]
-
-
-
-
-
[1] -
[1] -
[1] -
[1] -
-
-
-
-
-
-
-
-
Typ Max Unit
- 100 nA
- 50 μA
- 100 nA
- 100 nA
350 -
320 -
240 -
100 -
110
160
200
230
270
58
165
240
300
345
400
86
mV
mV
mV
mV
mV
mΩ
0.78
1.02
0.81
0.9
1.1
0.9
V
V
V
30 -
60 -
90 -
140 -
80 -
220 -
115 -
ns
ns
ns
ns
ns
ns
MHz
85 -
pF
PBSS4032PX_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 1 April 2010
© NXP B.V. 2010. All rights reserved.
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PBSS4032PX pdf, datenblatt
NXP Semiconductors
www.DataSheet4U.com
PBSS4032PX
30 V, 4.2 A PNP low VCEsat (BISS) transistor
12. Revision history
Table 9. Revision history
Document ID
Release date
PBSS4032PX_1
20100401
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PBSS4032PX_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 1 April 2010
© NXP B.V. 2010. All rights reserved.
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