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Número de pieza | BLS6G2933P-200 | |
Descripción | LDMOS S-Band radar pallet amplifier | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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No Preview Available ! BLS6G2933P-200
LDMOS S-Band radar pallet amplifier
Rev. 01 — 28 May 2010
www.DataSheet4U.com
Objective data sheet
1. Product profile
CAUTION
1.1 General description
200 W LDMOS amplifier pallet intended for radar applications in the 2.9 GHz to 3.3 GHz
range.
Table 1. Typical performance
RF performance at Tcase = 25 °C in a common source class-AB test circuit.
Mode of operation
f
VDS
PL(1dB) Gp
(GHz)
(V) (W) (dB)
class-AB; tp = 300 μs; δ = 10 % 2.9 to 3.3 32
220 11
ηD
(%)
45
IDq
(mA)
100
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
Excellent thermal stability
Designed for broadband operation (2.9 GHz to 3.3 GHz)
Matched to 50 Ω for ease of use
Extreme low weight pallet (environmental friendly and easy to use)
1.3 Applications
General S-Band radar applications
1 page NXP Semiconductors
8. Test information
VGG
C1
C2
C3
C4 R1
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BLS6G2933P-200
LDMOS S-Band radar pallet amplifier
VDD
C12
C11
C10
C9
C5 R2
C6
C7
C8
C13
C14
C15
C16
001aak230
Fig 2.
The striplines are on a Rogers RO6006 Printed-Circuit Board (PCB) with thickness = 0.635 mm.
See Table 8 for list of components. The drawing is not to scale.
Component layout
Table 8. List of components
See Figure 2 for component layout.
Component
C1, C8
C2, C7, C11, C15
C3, C4, C5, C6, C9, C10, C13, C14
C12
C16
R1, R2
Description
Value
multilayer ceramic chip capacitor 47 μF
multilayer ceramic chip capacitor 100 pF
multilayer ceramic chip capacitor 33 pF
electrolytic capacitor
680 μF
electrolytic capacitor
68 μF
SMD resistor
33 Ω
Remarks
TDK
ATC100B
ATC100A
thin film
BLS6G2933P-200
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 28 May 2010
© NXP B.V. 2010. All rights reserved.
5 of 11
5 Page NXP Semiconductors
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
2.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 4
7.1 Ruggedness in class-AB operation . . . . . . . . . 4
8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5
9 Package information . . . . . . . . . . . . . . . . . . . . . 6
10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
11 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
13.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
14 Contact information. . . . . . . . . . . . . . . . . . . . . 10
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
www.DataSheet4U.com
BLS6G2933P-200
LDMOS S-Band radar pallet amplifier
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 28 May 2010
Document identifier: BLS6G2933P-200
11 Page |
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BLS6G2933P-200 | LDMOS S-Band radar pallet amplifier | NXP Semiconductors |
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