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PBSS4630PA Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer PBSS4630PA
Beschreibung 6 A NPN low VCEsat (BISS) transistor
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 15 Seiten
PBSS4630PA Datasheet, Funktion
PBSS4630PA
30 V, 6 A NPN low VCEsat (BISS) transistor
Rev. 01 — 6 May 2010
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra
thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
PNP complement: PBSS5630PA.
1.2 Features and benefits
„ Low collector-emitter saturation voltage VCEsat
„ High collector current capability IC and ICM
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
„ Exposed heat sink for excellent thermal and electrical conductivity
„ Leadless small SMD plastic package with medium power capability
1.3 Applications
„ Loadswitch
„ Battery-driven devices
„ Power management
„ Charging circuits
„ Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
RCEsat
collector-emitter
saturation resistance
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
Conditions
open base
single pulse;
tp 1 ms
IC = 6 A;
IB = 300 mA
Min Typ Max Unit
- - 30 V
- - 6A
- - 7A
[1] -
35 46 mΩ






PBSS4630PA Datasheet, Funktion
NXP Semiconductors
www.DataSheet4U.com
PBSS4630PA
30 V, 6 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
ICBO
ICES
collector-base
cut-off current
collector-emitter
cut-off current
VCB = 24 V; IE = 0 A
VCB = 24 V; IE = 0 A;
Tj = 150 °C
VCE = 24 V; VBE = 0 V
-
-
-
IEBO emitter-base
cut-off current
VEB = 5 V; IC = 0 A
-
hFE
VCEsat
RCEsat
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
VCE = 2 V
IC = 0.5 A
IC = 1 A
IC = 2 A
IC = 6 A
IC = 0.5 A; IB = 50 mA
IC = 1 A; IB = 50 mA
IC = 1 A; IB = 10 mA
IC = 2 A; IB = 20 mA
IC = 3 A; IB = 30 mA
IC = 4 A; IB = 400 mA
IC = 6 A; IB = 300 mA
IC = 6 A; IB = 300 mA
[1]
280
270
260
180
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
VBEsat
VBEon
base-emitter
saturation voltage
base-emitter
turn-on voltage
IC = 1 A; IB = 10 mA
IC = 6 A; IB = 300 mA
VCE = 2 V; IC = 2 A
[1] -
[1] -
[1] -
td delay time
tr rise time
ton turn-on time
VCC = 9 V; IC = 2 A;
IBon = 0.1 A;
IBoff = 0.1 A
-
-
-
ts storage time
-
tf fall time
-
toff turn-off time
-
fT transition frequency VCE = 10 V;
IC = 100 mA;
f = 100 MHz
70
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
-
f = 1 MHz
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
Typ Max Unit
- 100 nA
- 50 μA
- 100 nA
- 100 nA
450 -
440 -
415 -
280 -
21 30 mV
40 55 mV
60 80 mV
100 130 mV
135 185 mV
140 185 mV
210 275 mV
35 46 mΩ
0.75 0.9
0.97 1.1
0.74 0.9
V
V
V
22 -
58 -
80 -
485 -
85 -
570 -
115 -
ns
ns
ns
ns
ns
ns
MHz
40 50 pF
PBSS4630PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 6 May 2010
© NXP B.V. 2010. All rights reserved.
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PBSS4630PA pdf, datenblatt
NXP Semiconductors
12. Revision history
Table 9. Revision history
Document ID
Release date
PBSS4630PA v.1
20100506
Data sheet status
Product data sheet
www.DataSheet4U.com
PBSS4630PA
30 V, 6 A NPN low VCEsat (BISS) transistor
Change notice
-
Supersedes
-
PBSS4630PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 6 May 2010
© NXP B.V. 2010. All rights reserved.
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