PBSS5560PA Datasheet PDF - NXP Semiconductors
| Part Number | PBSS5560PA | |
| Description | 5 A PNP low VCEsat (BISS) transistor | |
| Manufacturers | NXP Semiconductors | |
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PBSS5560PA
60 V, 5 A PNP low VCEsat (BISS) transistor
Rev. 01 — 21 April 2010
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra
thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
NPN complement: PBSS4560PA.
1.2 Features and benefits
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Exposed heat sink for excellent thermal and electrical conductivity
Leadless small SMD plastic package with medium power capability
1.3 Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
RCEsat
collector-emitter
saturation resistance
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Conditions
open base
single pulse;
tp ≤ 1 ms
IC = −5 A;
IB = −250 mA
Min Typ Max Unit
- - −60 V
- - −5 A
- - −6 A
[1] -
55 90 mΩ
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NXP Semiconductors
www.DataSheet4U.com
PBSS5560PA
60 V, 5 A PNP low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
10
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02 0.01
0
006aab981
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102
Zth(j-a)
(K/W)
10
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02 0.01
1
0
006aab982
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS5560PA_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 21 April 2010
© NXP B.V. 2010. All rights reserved.
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| Part Number | Description | MFRS |
| PBSS5560PA | The function is 5 A PNP low VCEsat (BISS) transistor. NXP Semiconductors | |
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