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PBSS4160K Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer PBSS4160K
Beschreibung 1 A NPN low VCEsat (BISS) transistor
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 12 Seiten
PBSS4160K Datasheet, Funktion
www.DataSheet4U.com
PBSS4160K
60 V, 1 A NPN low VCEsat (BISS) transistor
Rev. 01 — 29 April 2004
Objective data sheet
1. Product profile
1.1 General description
NPN low VCEsat (BISS) transistor in a SOT346 (SC59) plastic package. PNP complement:
PBSS5160K.
1.2 Features
s Low collector-emitter saturation voltage VCEsat
s High collector current capability IC and ICM
s High efficiency leading to less heat generation
s Reduces printed-circuit board area required
s Cost effective replacement of medium power transistor BCP55 and BCX55.
1.3 Applications
s Major application segments
x Automotive 42 V power
x Telecom infrastructure
x Industrial
s Power management
x DC-to-DC conversion
x Supply line switching
s Peripheral driver
x Driver in low supply voltage applications, e.g. lamps and LEDs
x Inductive load driver, e.g. relays, buzzers and motors.
1.4 Quick reference data
Table 1:
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
Conditions
Min Typ Max Unit
- - 60 V
- - 1A
- - 2A
- - 280 m






PBSS4160K Datasheet, Funktion
Philips Semiconductors
www.DataSheet4U.com
PBSS4160K
60 V, 1 A NPN low VCEsat (BISS) transistor
800
hFE
600
400
200
mle130
(1)
(2)
(3)
1.2
VBE
(V)
0.8
0.4
mle133
(1)
(2)
(3)
0
101
1
10 102 103 104
IC (mA)
VCE = 5 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = 55 °C.
Fig 3. DC current gain as a function of collector
current; typical values.
1
VCEsat
(V)
101
mle135
0
101
1
10 102 103 104
IC (mA)
VCE = 5 V.
(1) Tamb = 55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig 4. Base-emitter voltage as a function of collector
current; typical values.
10
VCEsat
(V)
1
001aaa825
102
(2) (1)
(3)
103
101
1
10 102 103 104
IC (mA)
IC/IB = 10.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = 55 °C.
Fig 5. Collector-emitter saturation voltage as a
function of collector current; typical values.
101
(1)
(2)
(3)
102
101
1
10 102 103 104
IC (mA)
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = 55 °C.
Fig 6. Collector-emitter saturation voltage as a
function of collector current; typical values.
9397 750 12702
Objective data sheet
Rev. 01 — 29 April 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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PBSS4160K pdf, datenblatt
Philips Semiconductors
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13 Contact information . . . . . . . . . . . . . . . . . . . . 11
www.DataSheet4U.com
PBSS4160K
60 V, 1 A NPN low VCEsat (BISS) transistor
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 29 April 2004
Document order number: 9397 750 12702
Published in The Netherlands

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