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PDF PBSS302ND Data sheet ( Hoja de datos )
| Número de pieza | PBSS302ND | |
| Descripción | 40V NPN low VCEsat (BISS) transistor | |
| Fabricantes | NXP Semiconductors | |
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PBSS302ND
40 V NPN low VCEsat (BISS) transistor
Rev. 01 — 19 April 2005
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74)
SMD plastic package.
PNP complement: PBSS302PD.
1.2 Features
s Ultra low collector-emitter saturation voltage VCEsat
s 4 A continuous collector current capability IC (DC)
s Up to 15 A peak current
s Very low collector-emitter saturation resistance
s High efficiency due to less heat generation
1.3 Applications
s Power management functions
s Charging circuits
s DC-to-DC conversion
s MOSFET gate driving
s Power switches (e.g. motors, fans)
s Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1:
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
Min
collector-emitter voltage open base
-
collector current (DC)
[1] -
peak collector current
collector-emitter saturation
resistance
t = 1 ms or limited
by Tj(max)
IC = 6 A; IB = 600 mA
-
[2] -
Typ
-
-
-
55
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), AL2O3, standard footprint.
[2] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Max Unit
40 V
4A
15 A
75 mΩ
1 page  
Philips Semiconductors
PBSS302ND
www.DataSheet4U.com
40 V NPN low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
10
1
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
006aaa272
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 1 cm2
(1) δ = 1
(2) δ = 0.75
(3) δ = 0.5
(4) δ = 0.33
(5) δ = 0.2
(6) δ = 0.1
(7) δ = 0.05
(8) δ = 0.02
(9) δ = 0.01
(10) δ = 0
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 14514
Product data sheet
Rev. 01 — 19 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
5 of 15
5 Page 
Philips Semiconductors
8. Test information
IB
90 %
10 %
IC
90 %
PBSS302ND
www.DataSheet4U.com
40 V NPN low VCEsat (BISS) transistor
IBon (100 %)
input pulse
(idealized waveform)
IBoff
output pulse
(idealized waveform)
IC (100 %)
10 %
td tr
ton
Fig 13. BISS transistor switching time definition
ts
toff
t
tf
006aaa003
VBB
VCC
(probe)
oscilloscope
450 Ω
VI
RB
R2
R1
RC
Vo (probe)
oscilloscope
450 Ω
DUT
(1) VCC = 10 V; IC = 2 A; IBon = 0.1 A; IBoff = −0.1 A
Fig 14. Test circuit for switching times
mlb826
9397 750 14514
Product data sheet
Rev. 01 — 19 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet PBSS302ND.PDF ] | |
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