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Teilenummer | PBSS301PD |
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Beschreibung | 4A PNP low VCEsat (BISS) transistor PNP low VCEsat Breakthrough | |
Hersteller | NXP Semiconductors | |
Logo | ||
Gesamt 16 Seiten PBSS301PD
www.DataSheet4U.com
20 V, 4 A PNP low VCEsat (BISS) transistor
Rev. 02 — 25 April 2005
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD
plastic package.
NPN complement: PBSS301ND.
1.2 Features
s Very low collector-emitter saturation resistance
s Ultra low collector-emitter saturation voltage
s 4 A continuous collector current
s Up to 15 A peak current
s High efficiency due to less heat generation
1.3 Applications
s Power management functions
s Charging circuits
s DC-to-DC conversion
s MOSFET gate driving
s Power switches (e.g. motors, fans)
s Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
Conditions
Min Typ Max
VCEO
IC
ICM
RCEsat
collector-emitter voltage open base
collector current (DC)
peak collector current
collector-emitter saturation
resistance
single pulse;
tp ≤ 1 ms
IC = −4 A;
IB = −400 mA
-
[1] -
-
[2] -
- −20
- −4
- −15
50 70
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Unit
V
A
A
mΩ
Philips Semiconductors
PBSS301PD
www.DataSheet4U.com
20 V, 4 A PNP low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
10
1
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
006aaa273
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB; mounting pad for collector 6 cm2
(1) δ = 1
(2) δ = 0.75
(3) δ = 0.5
(4) δ = 0.33
(5) δ = 0.2
(6) δ = 0.1
(7) δ = 0.05
(8) δ = 0.02
(9) δ = 0.01
(10) δ = 0
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 14959
Product data sheet
Rev. 02 — 25 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
6 of 16
6 Page Philips Semiconductors
9. Package outline
Plastic surface mounted package; 6 leads
DB
PBSS301PD
www.DataSheet4U.com
20 V, 4 A PNP low VCEsat (BISS) transistor
SOT457
E AX
y
654
HE v M A
pin 1
index
1
e
2
bp
3
wM B
A
A1
Q
Lp
detail X
c
01
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT A
A1 bp
c
D
E
e HE Lp Q
v
w
y
mm
1.1 0.1 0.40 0.26
0.9 0.013 0.25 0.10
3.1
2.7
1.7 0.95
1.3
3.0
2.5
0.6 0.33 0.2
0.2 0.23
0.2
0.1
OUTLINE
VERSION
SOT457
IEC
REFERENCES
JEDEC
JEITA
SC-74
Fig 15. Package outline SOT457 (SC-74)
9397 750 14959
Product data sheet
Rev. 02 — 25 April 2005
EUROPEAN
PROJECTION
ISSUE DATE
01-05-04
04-11-08
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
12 of 16
12 Page | ||
Seiten | Gesamt 16 Seiten | |
PDF Download | [ PBSS301PD Schematic.PDF ] |
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