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DIM2400ESM12-A000 Schematic ( PDF Datasheet ) - Dynex Semiconductor

Teilenummer DIM2400ESM12-A000
Beschreibung Single Switch IGBT Module
Hersteller Dynex Semiconductor
Logo Dynex Semiconductor Logo 




Gesamt 10 Seiten
DIM2400ESM12-A000 Datasheet, Funktion
Replaces July 2002, version DS5536-2.1
FEATURES
I 10µs Short Circuit Withstand
I High Thermal Cycling Capability
I Non Punch Through Silicon
I Isolated MMC Base with AlN Substrates
DIM2400ESM12-A000
www.DataSheet4U.com
DIM2400ESM12-A000
Single Switch IGBT Module
DS5529-3.0 March 2003
KEY PARAMETERS
VCES
1200V
VCE(sat)*
(typ)
2.2V
IC
(max)
2400A
IC(PK)
(max)
4800A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
I High Reliability Inverters
I Motor Controllers
I Traction Drives
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 2400A.
The DIM2400ESM12-A000 is a single switch 1200V, n
channel enhancement mode, insulated gate bipolar transistor
(IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
This module is optimised for applications requiring high thermal
cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM2400ESM12-A000
Note: When ordering, please use the whole part number.
Aux C
External connection
C1 C2
C3
G
Aux E
E1 E2
External connection
E3
Fig. 1 Single switch circuit diagram
Outline type code: E
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/10






DIM2400ESM12-A000 Datasheet, Funktion
DIM2400ESM12-A000
www.DataSheet4U.com
TYPICAL CHARACTERISTICS
4800
4200
Common emitter
Tcase = 25˚C
Vce is measured at power busbars
and not the auxiliary terminals
3600
3000
2400
1800
1200
600
0
0
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
4.0
700
Tc = 125˚C,
Vcc = 600V,
Rg = 1 Ohm
600
4800
4200
Common emitter
Tcase = 125˚C
Vce is measured at power busbars
and not the auxiliary terminals
3600
3000
2400
1800
1200
600
0
0
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
4.5
5.0
700
Tc = 125˚C,
Vcc = 600V,
IC = 2400A
600
500 500
400 400
300 300
200 200
100
0
0
Eon
Eoff
Erec
500
1000
1500
2000
2500
Collector current, IC - (A)
Fig. 5 Typical switching energy vs collector current
100
0
0.8
1 1.2
1.4
Gate resistance, Rg - (Ohms)
Eon
Eoff
Erec
1.6
Fig. 6 Typical switching energy vs gate resistance
6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com

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