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DIM400DDS17-A000 Schematic ( PDF Datasheet ) - Dynex Semiconductor

Teilenummer DIM400DDS17-A000
Beschreibung Dual Switch IGBT Module
Hersteller Dynex Semiconductor
Logo Dynex Semiconductor Logo 




Gesamt 9 Seiten
DIM400DDS17-A000 Datasheet, Funktion
FEATURES
10µs Short Circuit Withstand
Non Punch Through Silicon
Isolated Copper Baseplate
Lead Free construction
APPLICATIONS
High Power Inverters
Motor Controllers
DIM400DDS17-A000
Dual Switch IGBT Module
DS5859-1.0 June 2005 (LN24024)
KEY PARAMETERS
VCES
VCE
*
(sat)
IC
IC(PK)
(typ)
(max)
(max)
1700V
2.7V
400A
800A
*(measured at the power busbars and not the auxiliary terminals)
The Powerline range of high power modules
includes half bridge, chopper, dual, single and bi-
directional switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The DIM400DDS17-A000 is a dual switch 1700V, n
channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus full
10µs short circuit withstand.
The module incorporates an electrically isolated
base plate and low inductance construction enabling
circuit designers to optimise circuit layouts and
utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM400DDS17-A000
Note: When ordering, please use the whole part number.
.
Fig. 1 Dual switch circuit diagram
Outline type code: D
(See package details for further information)
Fig. 2 Electrical connections (not to scale)
www.DataSheet4U.com
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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DIM400DDS17-A000 Datasheet, Funktion
SEMICONDUCTOR
DIM400DDS17-A000
Fig.3 Typical output characteristics
Fig.4 Typical output characteristics
Fig.5 Typical switching energy vs collector current
Fig.6 Typical switching energy vs gate resistance
www.DataSheet4U.com
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
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