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Teilenummer | DIM800DDS17-A000 |
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Beschreibung | Dual Switch IGBT Module | |
Hersteller | Dynex Semiconductor | |
Logo | ||
Gesamt 9 Seiten FEATURES
• 10µs Short Circuit Withstand
• Non Punch Through Silicon
• Isolated Copper Baseplate
• Lead Free construction
APPLICATIONS
• High Power Inverters
• Motor Controllers
DIM800DDS17-A000
Dual Switch IGBT Module
DS5844-1.0 June 2005 (LN23944)
KEY PARAMETERS
VCES
VCE
*
(sat)
IC
IC(PK)
(typ)
(max)
(max)
1700V
2.7V
800A
1600A
*(measured at the power busbars and not the auxiliary terminals)
The Powerline range of high power modules
includes half bridge, chopper, dual, single and bi-
directional switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The DIM800DDS17-A000 is a dual switch 1700V, n
channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus full
10µs short circuit withstand.
The module incorporates an electrically isolated
base plate and low inductance construction enabling
circuit designers to optimise circuit layouts and
utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM800DDS17-A000
Note: When ordering, please use the whole part number.
.
Fig. 1 Dual switch circuit diagram
Outline type code: D
(See package details for further information)
Fig. 2 Electrical connections (not to scale)
www.DataSheet4U.com
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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SEMICONDUCTOR
DIM800DDS17-A000
Fig.3 Typical output characteristics
Fig.4 Typical output characteristics
Fig.5 Typical switching energy vs collector current
Fig.6 Typical switching energy vs gate resistance
www.DataSheet4U.com
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
6/9
6 Page | ||
Seiten | Gesamt 9 Seiten | |
PDF Download | [ DIM800DDS17-A000 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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