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PBLS6002D Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer PBLS6002D
Beschreibung 60V PNP BISS loadswitch
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 16 Seiten
PBLS6002D Datasheet, Funktion
PBLS6002D
60 V PNP BISS loadswitch
Rev. 01 — 23 June 2005
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and
NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted
Device (SMD) plastic package.
1.2 Features
s Low VCEsat (BISS) transistor and resistor-equipped transistor in one package
s Low threshold voltage (< 1 V) compared to MOSFET
s Low drive power required
s Space-saving solution
s Reduction of component count
1.3 Applications
s Supply line switches
s Battery charger switches
s High-side switches for LEDs, drivers and backlights
s Portable equipment
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
Conditions
Min Typ Max
TR1; PNP low VCEsat transistor
VCEO
collector-emitter voltage open base
IC collector current (DC)
RCEsat
collector-emitter saturation IC = 1 A;
resistance
IB = 100 mA
TR2; NPN resistor-equipped transistor
-
[1] -
[2] -
- 60
- 1
255 340
VCEO
IO
R1
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
open base
- - 50
- - 100
3.3 4.7 6.1
R2/R1
bias resistor ratio
0.8 1
1.2
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2] Pulse test: tp 300 µs; δ ≤ 0.02.
Unit
V
A
m
V
mA
k






PBLS6002D Datasheet, Funktion
Philips Semiconductors
PBLS6002D
www.DataSheet4U.com
60 V PNP BISS loadswitch
103
Zth(j-a)
(K/W) δ = 1
0.75
102
0.5
0.33
0.2
0.1
0.05
10 0.02
0.01
0
006aaa464
1
105
104
103
102
101
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time;
typical values
7. Characteristics
Table 7: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
TR1; PNP low VCEsat transistor
ICBO
collector-base cut-off
current
ICES collector-emitter cut-off
current
VCB = 60 V; IE = 0 A
VCB = 60 V; IE = 0 A;
Tj = 150 °C
VCE = 60 V; VBE = 0 V
-
-
-
IEBO
hFE
VCEsat
RCEsat
VBEsat
emitter-base cut-off current VEB = 5 V; IC = 0 A
DC current gain
VCE = 5 V; IC = 1 mA
VCE = 5 V;
IC = 500 mA
VCE = 5 V;
IC = 1000 mA
collector-emitter saturation IC = 100 mA;
voltage
IB = 1 mA
IC = 500 mA;
IB = 50 mA
IC = 1000 mA;
IB = 100 mA
collector-emitter saturation IC = 1 A;
resistance
IB = 100 mA
base-emitter saturation
voltage
IC = 1 A; IB = 50 mA
-
200
[1] 150
[1] 100
-
[1] -
[1] -
[1] -
[1] -
Typ Max Unit
- 100 nA
- 50 µA
- 100 nA
- 100 nA
350 -
230 -
160 -
110 175 mV
135 180 mV
255 340 mV
255 340 m
0.95 1.1 V
9397 750 15197
Product data sheet
Rev. 01 — 23 June 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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PBLS6002D pdf, datenblatt
Philips Semiconductors
9. Package outline
PBLS6002D
www.DataSheet4U.com
60 V PNP BISS loadswitch
3.1
2.7
65
3.0 1.7
2.5 1.3
pin 1 index
1.1
0.9
4 0.6
0.2
12
0.95
1.9
Dimensions in mm
Fig 19. Package outline SOT457 (SC-74)
3
0.40
0.25
0.26
0.10
04-11-08
10. Packing information
Table 8: Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. [1]
Type number Package
Description
PBLS6002D
SOT457
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
Packing quantity
3000 10000
[2] -115
-135
[3] -125
-165
[1] For further information and the availability of packing methods, see Section 17.
[2] T1: normal taping
[3] T2: reverse taping
9397 750 15197
Product data sheet
Rev. 01 — 23 June 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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