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Teilenummer | PBLS2002D |
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Beschreibung | 20V PNP BISS loadswitch | |
Hersteller | NXP Semiconductors | |
Logo | ||
Gesamt 16 Seiten PBLS2002D
20 V PNP BISS loadswitch
Rev. 01 — 23 June 2005
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)
plastic package.
1.2 Features
s Low VCEsat (BISS) and resistor-equipped transistor in one package
s Low threshold voltage (< 1 V) compared to MOSFET
s Low drive power required
s Space-saving solution
s Reduction of component count
1.3 Applications
s Supply line switches
s Battery charger switches
s High-side switches for LEDs, drivers and backlights
s Portable equipment
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
TR1; PNP low VCEsat transistor
VCEO
collector-emitter voltage open base
IC collector current (DC)
RCEsat
collector-emitter saturation IC = −1 A;
resistance
IB = −100 mA
TR2; NPN resistor-equipped transistor
-
-
[1] -
- −20 V
- −1 A
185 280 mΩ
VCEO
IO
R1
collector-emitter voltage
output current
bias resistor 1 (input)
open base
- - 50 V
- - 100 mA
3.3 4.7 6.1 kΩ
R2/R1
bias resistor ratio
0.8 1
1.2
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Philips Semiconductors
PBLS2002D
www.DataSheet4U.c
20 V PNP BISS loadswitch
7. Characteristics
Table 7: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
TR1; PNP low VCEsat transistor
ICBO
collector-base cut-off
current
VCB = −20 V; IE = 0 A
VCB = −20 V; IE = 0 A;
Tj = 150 °C
ICES collector-emitter
cut-off current
VCE = −20 V; VBE = 0 V
IEBO emitter-base cut-off VEB = −5 V; IC = 0 A
current
hFE
VCEsat
RCEsat
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
VCE = −2 V; IC = −1 mA
VCE = −2 V; IC = −100 mA
VCE = −2 V; IC = −500 mA
VCE = −2 V; IC = −1 A
VCE = −2 V; IC = −2 A
IC = −100 mA; IB = −1 mA
IC = −500 mA; IB = −50 mA
IC = −1 A; IB = −50 mA
IC = −1 A; IB = −100 mA
IC = −1 A; IB = −100 mA
VBEsat
VBEon
base-emitter
saturation voltage
base-emitter
turn-on voltage
IC = −1 A; IB = −50 mA
IC = −1 A; IB = −100 mA
VCE = −5 V; IC = −1 A
td delay time
tr rise time
IC = −1 A; IBon = −50 mA;
IBoff = 50 mA
ton turn-on time
ts storage time
tf fall time
toff turn-off time
fT transition frequency IC = −50 mA; VCE = −10 V;
f = 100 MHz
Cc collector capacitance VCB = −10 V; IE = ie = 0 A;
f = 1 MHz
Min Typ Max Unit
--
--
−0.1 µA
−50 µA
--
−0.1 µA
--
−0.1 µA
220
220
[1] 220
[1] 155
[1] 60
-
[1] -
[1] -
[1] -
[1] -
495
440
310
220
120
−55
−100
−200
−185
185
-
-
-
-
-
−90
−150
−300
−280
280
mV
mV
mV
mV
mΩ
[1] - −0.95 −1.1 V
[1] - −1 −1.1 V
[1] - −0.85 −1.1 V
-8
- 34
- 42
- 140
- 45
- 185
150 185
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
MHz
- 15 20 pF
PBLS2002D_1
Product data sheet
Rev. 01— 23 June 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
6 of 16
6 Page Philips Semiconductors
9. Package outline
PBLS2002D
www.DataSheet4U.com
20 V PNP BISS loadswitch
3.1
2.7
65
3.0 1.7
2.5 1.3
pin 1 index
1.1
0.9
4 0.6
0.2
12
0.95
1.9
Dimensions in mm
Fig 19. Package outline SOT457 (SC-74)
3
0.40
0.25
0.26
0.10
04-11-08
10. Packing information
Table 8: Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. [1]
Type number Package Description
PBLS2002D
SOT457
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
Packing quantity
3000 10000
[2] -115
-135
[3] -125
-165
[1] For further information and the availability of packing methods, see Section 17.
[2] T1: normal taping
[3] T2: reverse taping
PBLS2002D_1
Product data sheet
Rev. 01— 23 June 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
12 of 16
12 Page | ||
Seiten | Gesamt 16 Seiten | |
PDF Download | [ PBLS2002D Schematic.PDF ] |
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