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PDF NTJD4158C Data sheet ( Hoja de datos )
| Número de pieza | NTJD4158C | |
| Descripción | Small Signal MOSFET | |
| Fabricantes | ON Semiconductor | |
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NTJD4158C
Small Signal MOSFET
30 V/−20 V, +0.25/−0.88 A,
Complementary, SC−88
Features
• Leading 20 V Trench for Low RDS(on) Performance
• ESD Protected Gate
• SC−88 Package for Small Footprint (2 x 2 mm)
Applications
• DC−DC Conversion
• Load/Power Management
• Load Switch
• Cell Phones, MP3s, Digital Cameras, PDAs
• This is a Pb−Free Device
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Drain−to−Source Voltage
N−Ch
VDSS
30
P−Ch
−20
Gate−to−Source Voltage
N−Ch
VGS
±20
P−Ch
±12
N−Channel
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°C
TA = 85°C
ID
0.25
0.18
P−Channel
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°C
TA = 85°C
−0.88
−0.63
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
PD
0.27
Pulsed Drain
Current
N−Ch
P−Ch
tp = 10 ms
IDM
0.5
−3.0
Operating Junction and Storage Temperature
TJ, Tstg −55 to
150
Source Current (Body Diode)
N−Ch
P−Ch
IS 0.25
−0.48
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max
Junction−to−Ambient – Steady State (Note 1)
RqJA
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
460
Unit
V
V
A
W
A
°C
A
°C
Unit
°C/W
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http://onsemi.com
V(BR)DSS
N−Ch
30 V
P−Ch
−20 V
RDS(on) TYP
1.0 W @ 4.5 V
1.5 mW @ 2.5 V
215 mW @ −4.5 V
345 mW @ −2.5 V
ID MAX
0.25 A
−0.88 A
SC−88 (SOT−363)
(6−Leads)
S1 1
6 D1
G1 2
5 G2
D2 3
4 S2
(Top View)
6
1
SC−88 (SOT−363)
CASE 419B
STYLE 26
MARKING DIAGRAM
& PIN ASSIGNMENT
1
Source−1
6
Drain−1
Gate−1
Gate−2
Drain−2
Source−2
(Top View)
TC = Specific Device Code
D = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
NTJD4158CT1G SC−88 3000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 0
1
Publication Order Number:
NTJD4158C/D
1 page  
NTJD4158C
1
0.75
0.5
0.25
0
0
TYPICAL P−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS = −4.5, −3.5 & −2.5 V TJ = 25°C
−2 V
−1.75 V
1
VDS ≥ −20 V
0.9
0.8
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0.7
0.6
0.5
−1.5 V
0.4
0.3
125°C
−1.25 V
−1 V
0.4 0.8 1.2 1.6
2
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.2
0.1
0
0
25°C
TJ = −55°C
0.5 1 1.5 2 2.5 3 3.5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.3
VGS = −4.5 V
0.25
0.2
0.15
TJ = 125°C
TJ = 25°C
TJ = −55°C
0.5
TJ = 25°C
0.4
0.3
0.2
0.1
VGS = −2.5 V
VGS = −4.5 V
0.1
0
0.25 0.5 0.75 1
−ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Drain Current and
Temperature
0
0.4 0.5 0.6 0.7 0.8 0.9 1
−ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.0
1.8
ID = −0.88 A
VGS = −4.5 V
1.6
1.4
1.2
10000
VGS = 0 V
1000
TJ = 150°C
1.0 TJ = 125°C
0.8
0.6 100
0.4
0.2
0
−50
−25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
150
10
0 5 10 15 20
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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