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PDF D1457 Data sheet ( Hoja de datos )
| Número de pieza | D1457 | |
| Descripción | NPN Transistor - 2SD1457 | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de D1457 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Power Transistors
2SD1457, 2SD1457A
Silicon NPN triple diffusion planar type Darlington
www.DataSheet4U.com
For power amplification
Unit: mm
s Features
q High foward current transfer ratio hFE
q High collector to base voltage VCBO
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to 2SD1457
emitter voltage 2SD1457A
VCBO
VCEO
200
150
200
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
5
10
6
60
3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
15.0±0.3
11.0±0.2
φ3.2±0.1
5.0±0.2
3.2
2.0±0.2
2.0±0.1
1.1±0.1
0.6±0.2
5.45±0.3
10.9±0.5
123
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
Internal Connection
C
B
E
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
ICBO
VCEO(sus)
VEBO
hFE*
VCE(sat)
VBE(sat)
fT
VCB = 200V, IE = 0
IC = 2A, L = 10mH
IE = 0.1A, IC = 0
VCE = 2V, IC = 2A
IC = 3A, IB = 0.06A
IC = 3A, IB = 0.06A
VCE = 10V, IC = 0.5A, f = 1MHz
min typ max Unit
100 µA
150 V
5V
700 10000
1.5 V
2.5 V
15 MHz
*hFE Rank classification
Rank
Q
P
O
hFE 700 to 2500 2000 to 5000 4000 to 10000
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet D1457.PDF ] | |
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