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PDF NTMFS4834N Data sheet ( Hoja de datos )
| Número de pieza | NTMFS4834N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NTMFS4834N
Power MOSFET
30 V, 130 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb−Free Devices*
Applications
• CPU Power Delivery
• DC−DC Converters
www.Da•taLShoewetS4iUd.ce oSmwitching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA
(Note 1)
TA = 25°C
TA = 85°C
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA
(Note 2)
Power Dissipation
RqJA (Note 2)
Continuous Drain
Current RqJC
(Note 1)
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
TC = 25°C
TC = 85°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain
Current
TA = 25°C,
tp = 10 ms
Operating Junction and Storage
Temperature
VDSS
VGS
ID
PD
ID
PD
ID
PD
IDM
TJ, TSTG
30
20
21
15
2.31
13
9.5
0.9
130
93
86.2
260
−55 to
+150
V
V
A
W
A
W
A
W
A
°C
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 32 Apk, L = 1.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IS
dV/dt
EAS
TL
71 A
6 V/ns
512 mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
3.0 mW @ 10 V
4.0 mW @ 4.5 V
ID MAX
130 A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S 4834N
S AYWWG
GG
D
D
D
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS4834NT1G SO−8 FL 1500 Tape / Reel
(Pb−Free)
NTMFS4834NT3G SO−8 FL 5000 Tape / Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 0
1
Publication Order Number:
NTMFS4834N/D
1 page  
NTMFS4834N
TYPICAL PERFORMANCE CURVES
6500
6000
5500
5000
4500
4000
Ciss
TJ = 25°C
Ciss
12
10
8
VDS
20
QT 18
16
VGS
14
12
3500
3000
6 10
2500
2000
1500
1000
500
0
Crss
Coss
4 Qgs
2
0
Qgd
ID = 30 A
TJ = 25°C
8
6
4
2
0
−15 −10 −5 0 5 10 15 20 25 30
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75
www.DataSheet4U.com VGS
VDS
QG, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 8. Gate−To−Source and Drain−To−Source
Figure 7. Capacitance Variation
Voltage vs. Total Charge
1000
VDS = 15 V
ID = 15 A
VGS = 11.5 V
100
td(off)
tr
tf
10 td(on)
30
VGS = 0 V
25 TJ = 25°C
20
15
10
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
5
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
1000
10 ms
100
100 ms
1 ms
10
VGS = 20 V
SINGLE PULSE
1 TC = 25°C
RDS(on) LIMIT
THERMAL LIMIT
0.1 PACKAGE LIMIT
0.1 1
10
10 ms
dc
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
560
520
480
440
400
360
320
280
240
200
160
120
80
40
0
25
ID = 32 A
50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
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| PDF Descargar | [ Datasheet NTMFS4834N.PDF ] | |
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