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Número de pieza | APT30M60J | |
Descripción | N-Channel MOSFET | |
Fabricantes | Microsemi | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de APT30M60J (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! APT30M60J
600V, 30A, 0.16Ω Max
N-Channel MOSFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in flyback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
SS
G D SOT-227
"UL Recognized"
ISOTOP®
file # E145592
APT30M60J
Single die MOSFET
G
D
S
www.DataSheet4U.com
FEATURES
• Fast switching with low EMI/RFI
• Low RDS(on)
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• PFC and other boost converter
• Buck converter
• Two switch forward (asymmetrical bridge)
• Single switch forward
• Flyback
• Inverters
Absolute Maximum Ratings
Symbol Parameter
ID
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
IDM Pulsed Drain Current 1
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy 2
IAR Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD
RθJC
Total Power Dissipation @ TC = 25°C
Junction to Case Thermal Resistance
RθCS
TJ,TSTG
VIsolation
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
WT Package Weight
Torque Terminals and Mounting Screws.
Microsemi Website - http://www.microsemi.com
Ratings
30
19
160
±30
1200
21
Unit
A
V
mJ
A
Min
-55
2500
Typ
0.15
1.03
29.2
Max Unit
356 W
0.35 °C/W
150 °C
V
oz
g
10 in·lbf
1.1 N·m
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet APT30M60J.PDF ] |
Número de pieza | Descripción | Fabricantes |
APT30M60J | N-Channel MOSFET | Microsemi |
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